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System and method for releasing micro-electromechanical system (MEMS) structure by etching silicon sacrificial layer

A sacrificial layer and assisted etching technology, which is applied in the direction of microstructure technology, microstructure devices, and manufacturing microstructure devices, can solve problems such as reducing efficiency, increasing operating costs, affecting etching rate and throughput, and achieving high productivity High, good uniformity, fast etching rate effect

Active Publication Date: 2012-11-21
无锡影速半导体科技有限公司
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Problems solved by technology

However, reducing gas pressure and flow will affect etch rate and throughput, while adding carrier gas will reduce efficiency and increase operating costs

Method used

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  • System and method for releasing micro-electromechanical system (MEMS) structure by etching silicon sacrificial layer
  • System and method for releasing micro-electromechanical system (MEMS) structure by etching silicon sacrificial layer

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Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0041] The invention provides a method for releasing a MEMS structure by etching a silicon sacrificial layer. The method uses xenon difluoride as an etching reaction gas, and supercritical carbon dioxide as a carrier gas to release the silicon sacrificial layer. Carbon dioxide makes use of its supercritical state properties to make the etching of silicon by xenon difluoride more uniform, the smoothness of the corroded surface is higher, and the etching is more complete. Compared with traditional wet release and plasma release, this release method avoids damage to the device due to stirring or adhesion in wet release, can improve the uniformity of the entire wafer, and has a faster reaction rate, high efficiency, and time ...

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Abstract

The invention discloses system and method for releasing a micro-electromechanical system (MEMS) structure by etching a silicon sacrificial layer. The method adopts xenon difluoride as an etching reactive gas and adopts supercritical carbon dioxide as a carrier gas to release the silicon sacrificial layer. Based on the unique property of carbon dioxide in a supercritical state, silicon is etched more uniformly by xenon difluoride, the smoothness of an etched surface is higher and the etching is more complete. Compared with traditional wet release process and plasma release process, the method prevents devices from being damaged due to stirring or adhesion in the wet release process, improves the uniformity of an entire wafer, increases the reaction speed and the efficiency, shortens the process time, and achieves the effect of feasible large-scale production process of XeF2 etching.

Description

technical field [0001] The invention relates to the technical field of releasing MEMS sacrificial layers, in particular to a system and method for releasing MEMS structures by etching silicon sacrificial layers. Background technique [0002] The release process is a process often used in the MEMS manufacturing process. The release process is divided into wet release and dry release. Wet release uses a large amount of acid-base solution, which limits the application of metal for device interconnection, and will cause environmental pollution and increase the cost of wastewater treatment; release etching time is difficult to control; etching in thin and long gap areas The corrosion rate is slow; the most serious is that the stickiness of the microstructure will be caused during the drying process, and the graphics will be destroyed. When plasma is used for dry release, the surface after etching has large micro-roughness, incomplete etching, and residues; the charge generated ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 王磊惠瑜高超群景玉鹏
Owner 无锡影速半导体科技有限公司
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