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Preparation method of single crystal cubic carbon nitride thin film

A technology of cubic carbon nitride and thin film, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problem of not preparing single crystal cubic structure, achieve complete structure, high conversion rate, Simple operation effect

Active Publication Date: 2011-07-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the carbon nitride films prepared by the epitaxial growth method and chemical vapor deposition method currently used are amorphous structures, and there is no carbon nitride (C 3 N 4 ) crystal, so for single crystal cubic carbon nitride (C 3 N 4 ) research is still ongoing

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  • Preparation method of single crystal cubic carbon nitride thin film
  • Preparation method of single crystal cubic carbon nitride thin film
  • Preparation method of single crystal cubic carbon nitride thin film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0030] A method for preparing a single crystal cubic carbon nitride film, comprising the steps of:

[0031] Step 101, under plasma conditions at 200°C, treat the surface of the silicon (111) substrate with hydrogen for 5 minutes to form Si-H bonds on the surface of the silicon substrate, such as figure 1 As shown in figure a;

[0032] Step 102, placing the hydrogenated silicon substrate in the reaction chamber of the atomic layer deposition equipment; passing argon gas with a concentration of 99.99% into the reaction chamber of the atomic layer deposition equipment for 5 minutes to clean the reaction chamber; Pass diazomethane into the reaction chamber for 5 minutes, and at the same time irradiate with ultraviolet light with a wavelength of 285nm to decompose diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is: Such as figure 1 As shown in Figure b;

[0033] The decomposition product carbene (: CH2)...

Embodiment 2

[0038] A method for preparing a single crystal cubic carbon nitride film, comprising the steps of:

[0039] Step 101, under 300°C plasma conditions, treat the surface of the silicon (111) substrate with hydrogen gas for 10 minutes, so that Si-H bonds are formed on the surface of the silicon substrate, such as figure 1 As shown in figure a;

[0040] Step 102, placing the hydrogenated silicon substrate in the reaction chamber of the atomic layer deposition equipment; passing argon gas with a concentration of 99.99% into the reaction chamber of the atomic layer deposition equipment for 5 minutes to clean the reaction chamber; Pass diazomethane into the reaction chamber for 10 minutes, and at the same time, irradiate with ultraviolet light with a wavelength of 300nm to decompose diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is: Such as figure 1 As shown in Figure b;

[0041] The decomposition product...

Embodiment 3

[0046] A method for preparing a single crystal cubic carbon nitride film, comprising the steps of:

[0047] Step 101, under 400°C plasma conditions, treat the surface of the silicon (111) substrate with hydrogen gas for 15 minutes, so that Si-H bonds are formed on the surface of the silicon substrate, such as figure 1 As shown in figure a;

[0048] Step 102, placing the hydrogenated silicon substrate in the reaction chamber of the atomic layer deposition equipment; passing argon gas with a concentration of 99.99% into the reaction chamber of the atomic layer deposition equipment for 5 minutes to clean the reaction chamber; Pass diazomethane into the reaction chamber for 15 minutes, and at the same time irradiate with ultraviolet light with a wavelength of 320nm to decompose diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is: Such as figure 1 As shown in Figure b;

[0049] The decomposition product ...

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Abstract

The invention relates to a preparation technology of carbon nitride, in particular to a preparation method of a single crystal cubic carbon nitride thin film. The preparation method comprises the following steps: a silicon substrate is placed in an atomic layer deposition equipment reaction cavity; diazomethane is led to the atomic layer deposition equipment reaction cavity to conduct chemical adsorption on the surface of the silicon substrate; the diazomethane is further reacted with gaseous iodine led to the atomic layer deposition equipment reaction cavity for halogenation, so as to form an unsteady carbon iodine bond; after the halogenation reaction is stopped, ammonia gas is further led to the atomic layer deposition equipment reaction cavity for amination reaction, and iodine atoms in the carbon iodine bond are replaced by nitrogen atoms in the ammonia gas; and after the amination reaction is completed, a substance formed on the surface of the silicon substrate is the single crystal cubic carbon nitride thin film. The preparation method utilizes the atomic layer deposition technology to prepare the single crystal cubic carbon nitride thin film, is simple to operate, achieves a high conversion rate, consumes little energy, and is more beneficial for the deposition of carbon atoms and the nitrogen atoms and the growth of the carbon nitride thin film; and the manufactured carbon nitride thin film has a complete structure.

Description

technical field [0001] The invention relates to a preparation technology of carbon nitride, in particular to a preparation method of a single crystal cubic carbon nitride film. Background technique [0002] Carbon Nitride (C 3 N 4 ) material research has developed from theory to practice, and scientists have been able to prepare carbon nitride (C) with two to three structures under laboratory conditions. 3 N 4 ) substances, and it has been shown that they have a hardness exceeding that of diamond. However, most of the carbon nitride films prepared by the epitaxial growth method and chemical vapor deposition method currently used are amorphous structures, and there is no carbon nitride (C 3 N 4 ) crystal, so for single crystal cubic carbon nitride (C 3 N 4 ) research is still ongoing. [0003] The atomic layer deposition (Atomic Layer Deposition, hereinafter referred to as ALD) method uses the layer-by-layer growth method of the substrate to the film to prepare carbon...

Claims

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Application Information

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IPC IPC(8): C23C16/36C30B25/00C30B29/38
Inventor 刘键饶志鹏夏洋石莎莉
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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