Method for reducing operation power consumption of phase change memory unit
A phase-change memory, cell operation technology, applied in static memory, digital memory information, information storage, etc., to achieve the effect of reducing operating voltage and operating power consumption
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Embodiment 1
[0022] Adoption of BaTiO in Phase Change Memory Devices 3 as a buffer layer.
[0023] a. SiO after photolithography treatment by magnetron sputtering 2 / Si substrate prepared BaTiO with a thickness of 10nm 3 Thin film, the sputtering power is 20W, oxygen and argon gas are passed through during sputtering, and the ratio of oxygen partial pressure to argon partial pressure is 1:3.
[0024] b. The prepared BaTiO 3 The film was annealed in an oxygen atmosphere for 10 minutes at a temperature of 400° C. to obtain the final buffer layer material.
[0025] c. SiO coated with buffer layer material 2 GST phase-change material with a thickness of 150nm was prepared by magnetron sputtering on the / Si substrate, and packaged into a phase-change memory device.
Embodiment 2
[0027] The use of SrTiO in phase change memory devices 3 as a buffer layer.
[0028] a. SiO after photolithography treatment by magnetron sputtering 2SrTiO with a thickness of 10nm was prepared on a Si substrate 3 Thin film, the sputtering power is 20W, oxygen and argon gas are passed through during sputtering, and the ratio of oxygen partial pressure to argon partial pressure is 1:3.
[0029] b. The prepared SrTiO 3 The film was annealed in an oxygen atmosphere for 10 minutes at a temperature of 400° C. to obtain the final buffer layer material.
[0030] c. SiO coated with buffer layer material 2 GST phase-change material with a thickness of 150nm was prepared by magnetron sputtering on the / Si substrate, and packaged into a phase-change memory device.
[0031] The test of the resistance-voltage and current-voltage performance during the reset process of the phase change memory device is to use the Agilent-81104A pulse signal generator to output a specific voltage pulse,...
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