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Method for realizing self-assembly of zinc oxide nanometer wires

A zinc oxide nanowire and self-assembly technology, applied in the field of nano-processing, can solve the problems of preparing devices, nanowire films are not suitable for manufacturing devices, affecting the performance of thin-film devices, etc.

Inactive Publication Date: 2012-11-28
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For zinc oxide nanowires, there is still a lack of effective methods to prepare nanowire films
Prepare a layer of gold nanoparticle film on the surface of the silicon wafer as a catalyst to prepare a nanowire film, but because the presence of the catalyst will affect the performance of the film device, it is even impossible to use this film to prepare the device, so the nanowire film prepared by this method Thin films are not suitable for making devices

Method used

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  • Method for realizing self-assembly of zinc oxide nanometer wires

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Embodiment 1

[0019] The first step is silicon wafer cleaning. First, put the silicon wafer with a silicon dioxide insulating layer into 50 ml of ethanol, perform ultrasonic cleaning for 10 minutes, take it out and blow it dry with nitrogen; then, put the silicon wafer in 50 ml of acetone, and perform ultrasonic cleaning for 10 minutes, Take it out and dry it with nitrogen gas; finally put the wafer into 100 ml of deionized water, perform ultrasonic cleaning for 10 minutes, take it out and blow it dry with nitrogen gas.

[0020] The second step is the hydroxylation of the silicon wafer surface. Prepare a solution of sulfuric acid (concentration 98%) and hydrogen peroxide (concentration 30%) with a volume ratio of 2.5:1, put the cleaned silicon wafers into the solution, and boil them at 90°C for 2.5 hours. Remove and rinse repeatedly with deionized water. Finally, put the silicon wafer into deionized water, boil it at 80°C for 20 minutes, take it out and dry it with nitrogen gas.

[0021]...

Embodiment 2

[0025] The first step is silicon wafer cleaning. First, put the silicon wafer with a silicon dioxide insulating layer into 50 ml of ethanol, perform ultrasonic cleaning for 10 minutes, take it out and blow it dry with nitrogen; then, put the silicon wafer in 50 ml of acetone, and perform ultrasonic cleaning for 10 minutes, Take it out and dry it with nitrogen gas; finally put the wafer into 100 ml of deionized water, perform ultrasonic cleaning for 10 minutes, take it out and blow it dry with nitrogen gas.

[0026] The second step is the hydroxylation of the silicon wafer surface. Prepare a solution of sulfuric acid (concentration 98%) and hydrogen peroxide (concentration 30%) with a volume ratio of 2.5:1, put the cleaned silicon wafers into the solution, boil them at 90°C for 2 hours, and remove the silicon wafers after cooking Remove and rinse repeatedly with deionized water. Finally, put the cleaned silicon wafer into deionized water, boil it at 80° C. for 25 minutes, the...

Embodiment 3

[0031] The first step is silicon wafer cleaning. First, put the silicon wafer with a silicon dioxide insulating layer into 50 ml of ethanol, perform ultrasonic cleaning for 10 minutes, take it out and blow it dry with nitrogen; then, put the silicon wafer in 50 ml of acetone, and perform ultrasonic cleaning for 10 minutes, Take it out and dry it with nitrogen gas; finally put the wafer into 100 ml of deionized water, perform ultrasonic cleaning for 10 minutes, take it out and blow it dry with nitrogen gas.

[0032] The second step is the hydroxylation of the silicon wafer surface. Prepare a solution of sulfuric acid (concentration 98%) and hydrogen peroxide (concentration 30%) with a volume ratio of 2.5:1, put the cleaned silicon wafers into the solution, boil them at 90°C for 3 hours, and remove the silicon wafers after cooking Remove and rinse repeatedly with deionized water. Finally, put the cleaned silicon wafer into deionized water, boil it at 80° C. for 30 minutes, tak...

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Abstract

The invention relates to a method for realizing the self-assembly of zinc oxide nanometer wires in the field of nanometer processing, which comprises the following steps of: performing hydroxylation and amination on the surfaces of silicon wafers sequentially, and immersing the silicon wafers in dispersion liquid of the zinc oxide nanometer wires, which is subjected to surface modification by lauryl sodium sulfate, to realize the self-assembly. The method is simple, convenient and efficient, and the prepared zinc oxide nanometer wire membranes are suitable for preparing high-quality devices.

Description

technical field [0001] The invention relates to a method in the technical field of nano-processing, in particular to a method for realizing the self-assembly of zinc oxide nanowires. Background technique [0002] ZnO nanowires have excellent semiconductor properties, optical properties, and piezoelectric properties, and have received extensive attention and in-depth research. Zinc oxide nanowires can be used to prepare field effect transistors, ultraviolet light detectors, gas sensors, solar cells, nanogenerators and field emission devices. The premise of preparing zinc oxide nanowire thin film devices is to obtain a thin film with good uniform distribution of nanowires. As for ZnO nanowires, there is still a lack of effective methods to prepare nanowire films. Prepare a layer of gold nanoparticle film on the surface of the silicon wafer as a catalyst to prepare a nanowire film, but because the presence of the catalyst will affect the performance of the film device, it is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50
Inventor 张亚非戴振清魏良明徐东回兵
Owner SHANGHAI JIAOTONG UNIV
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