Double-layer transparent electrode on P type GaN (gallium nitride)

A technology of transparent electrodes and transparent conductive layers, which is applied in the field of electrodes, can solve problems such as difficulty in uniform current diffusion, poor stability, and ITO toxicity, and achieve the effects of uniform current diffusion, good thermal stability, and high stability

Inactive Publication Date: 2011-08-03
HANGZHOU SILAN AZURE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ITO has transparent and conductive characteristics, but it is difficult for ITO to achieve uniform diffusion of current as a transparent electrode, and the stability is not good
Furthermore, the world's In reserves are very small, the price is high, and ITO is toxic

Method used

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  • Double-layer transparent electrode on P type GaN (gallium nitride)
  • Double-layer transparent electrode on P type GaN (gallium nitride)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] On the P-type GaN layer 1, an ITO thin film 2 as the first transparent electrode layer and a ZnO-based thin film 3 as the second transparent electrode layer are sequentially deposited by magnetron sputtering technology from bottom to top. GaN-based LEDs using ITO and ZnO-based double-layer electrodes on P-type GaN can increase their luminous efficiency by 1-5%.

Embodiment 2

[0020] On the P-type GaN layer 1, an ITO thin film 2 as the first transparent electrode layer and a ZnO-based thin film 3 as the second transparent electrode layer are sequentially deposited by evaporation technology from bottom to top. GaN-based LEDs using ITO and ZnO-based double-layer electrodes on P-type GaN can increase their luminous efficiency by 1-4%.

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Abstract

The invention discloses a double-layer transparent electrode on P type GaN (gallium nitride) in GaN based LED (Light-Emitting Diode). The transparent electrode is composed of a double-layer structure of an ITO (Indium Tin Oxide) film and a ZnO (Zinc Oxide) based film. The process steps are that: 1, the ITO film is deposited on the P type GaN to be used as a first transparent conducting layer, and the thickness is 1-1000 microns; and 2, the low-resistance ZnO based film is deposited on the first transparent conducting layer to be used as a second transparent conducting layer, and the resistivity is 10-4 to 10-5 ohm cm. The double-layer transparent electrode has the advantages of low resistivity, high light transmittance and good stability, the current is uniformly deposited, and the double-layer electrode can improve the luminous efficiency of the GaN based LED and prolong the service life.

Description

technical field [0001] The invention relates to electrodes, in particular to a double-layer transparent electrode on P-type GaN. Background technique [0002] GaN-based materials are ideal materials for short-wavelength light-emitting devices. With the practicality of blue-violet GaN-based LEDs, white LEDs may replace various traditional lighting, and lighting technology will usher in a new revolution. However, there are still some technical difficulties in the production of GaN-based LEDs, such as the preparation of ohmic contact electrodes on P-type GaN. Ni / Au is a commonly used P-type GaN contact electrode, but Ni / Au is opaque, which restricts the improvement of GaN-based LED luminous efficiency. [0003] At present, the transparent electrode of LED mainly adopts indium tin oxide (ITO). ITO has transparent and conductive properties, but it is difficult for ITO to achieve uniform diffusion of current as a transparent electrode, and its stability is not good. Furthermor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42H01L33/36
Inventor 张昊翔叶志镇吕建国江忠永
Owner HANGZHOU SILAN AZURE
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