Method for preparing nitrogen-doped graphene material with hydrothermal process

A technology of nitrogen-doped graphene and hydrothermal method, which is applied in the field of preparation of nitrogen-doped graphene materials, can solve the problems of complex equipment required for the reaction, difficult control of nitrogen content, and difficulty in industrial production, and achieve easy industrial production, The effect of low production cost and simple equipment
CN102167310BInactive Publication Date: 2013-02-06HEILONGJIANG UNIV
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Patent Information

Authority / Receiving Office
CN Ā· China
Patent Type
Patents(China)
Current Assignee / Owner
HEILONGJIANG UNIV
Publication Date
2013-02-06
Estimated Expiration
Not applicable Ā· inactive patent

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Abstract

The invention discloses a method for preparing a nitrogen-doped graphene material with a hydrothermal process, relating to a method for preparing the nitrogen-doped graphene material. The technical problems of lower nitrogen content, difficulty in control of nitrogen content, high production cost, complex structure of equipment required by reaction, rigorous reaction conditions, low yield, difficulty in industrialized production and the like in the traditional method for preparing the nitrogen-doped graphene material are solved in the invention. The method comprises the steps of: 1, dissolving graphite oxide in a solvent, adding a surfactant and uniformly mixing; 2, adding a nitrogen-containing compound, and uniformly mixing; and 3, after a hydro-thermal reaction, washing and drying to obtain the nitrogen-doped graphene material. The nitrogen-doped graphene material prepared in the invention has the advantages of higher nitrogen content, controllable nitrogen content, low production cost, simple structure of required equipment, high yield and easiness in realizing industrialized production.
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Description

technical field

[0001] The invention relates to a preparation method of a nitrogen-doped graphene material. Background technique

[0002] Graphene with a two-dimensional structure has excellent physical and chemical properties, and has important application value in fields such as field emission transistors, supercapacitors, and lithium-ion batteries. However, nitrogen doping is very important for tuning the electronic structure of graphene. Nitrogen-doped graphene has important applications in supercapacitors, fuel cells and other fields. Therefore, in order to meet the needs of different fields, the design and synthesis of nitrogen-doped two-dimensional materials is very necessary. The traditional method for preparing nitrogen-doped graphene mainly contains: (1) in the process of preparing graphene by chemical vapor deposition (CVD), feed ammonia gas simultaneously and carry out nitrogen doping, and the highest nitrogen content is 5%; ( 2) In the process of preparing gr...

Claims

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