Method and equipment for processing tail gas containing ammonium chloride

Abstract

The invention provides a method for processing tail gas containing ammonium chloride and designs tail gas processing equipment. In the method, a mode of heating and cooling mixed gas reaction is adopted to control a place for generating and depositing NH4Cl dust, and cooling and depositing equipment is designed to effectively filter the ammonium chloride dust in the tail gas after reaction. The problem that ammonium chloride generated in a reaction cavity is difficult to clean in the process that GaN grows in a semiconductor material, especially in HVPE (High Voltage Paper Electrophoresis) issolved, tail gas does not contain dust, the subsequent cavity and pipeline of main reaction can be prevented from being blocked, the effective service life of the equipment is longer than the semiconductor material growth as long as possible, the use ratio of the equipment is improved, and the material growth cost is lowered.

Description

technical field [0001] The present invention relates to the growth of gallium nitride (GaN) semiconductor material and its hardware system, in particular to a process in the presence of hydrogen chloride (HCL) and ammonia (NH 3 ) participate in the chemical reaction and the chemical reaction with ammonium chloride formation. Background technique [0002] At present, the third generation of semiconductors has emerged. The third generation of semiconductor materials are III-V nitride materials mainly composed of GaN, AlN, InGaN and AlGaN, and are also called GaN-based materials. Among them, GaN and AlN have the advantages of forbidden bandwidth, high electron saturation rate, high breakdown voltage, small dielectric constant, good thermal stability and stable chemical properties. Moreover, the GaN-based material is a wide-bandgap semiconductor material with a direct bandgap, and its direct bandgap can cover 1.9-6.2eV. It is a good equipment for making devices such as backligh...

AI Technical Summary

Problems solved by technology

[0013] The purpose of the invention is to solve in the hydride vapor phase epitaxy (HVPE) process, because the generation of ammonium chloride by-product contains a large amount of ammonium chloride (NH 4 Cl) dust, blockage of follow-up pipelines, high maintenance frequency, too long equipment idle time, low equipment utilization, provide a set of ideas for gallium nitride growth exhaust gas treatment, and design a set of exhaust gas treatment equipment, is First heat the exhaust gas, then cool the exhaust gas, deposit the main by-product ammonium chloride, and filter the exhaust gas; a cooling deposition equipment is designed for hardware

Images