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Aluminum-silicon carbide composite material with ultrahigh volume fraction and preparation method thereof

A technology of volume fraction and composite materials, which is applied in the field of composite materials, can solve problems such as the difficulty in preparing shape metal matrix composite materials, and achieve the effects of increasing elastic modulus, improving mechanical properties, and matching thermal expansion coefficients

Active Publication Date: 2011-09-07
西安明科微电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The volume fractions of silicon carbide corresponding to composite materials with low, medium and high volume fractions are 10% to 30%, 30% to 50%, and 50% to 70%, respectively. The maximum volume fraction of silicon carbide currently used at home and abroad generally does not exceed 70% %, so the thermal expansion coefficient of the obtained composite material is greater than 7×10 -6 / K, thermal conductivity is less than 200W / mK
In addition, silicon carbide is difficult to process and requires a near-net-shape preparation method, but the methods currently used at home and abroad mainly use high pressure, so it is difficult to prepare metal matrix composites with complex shapes

Method used

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Examples

Experimental program
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Effect test

preparation example Construction

[0017] The preparation method of the present invention comprises the following steps:

[0018] Put the green silicon carbide coarse powder, green silicon carbide fine powder and green silicon carbide micropowder into the mixer and mix for 10-12 hours; then add additives and mold under the pressure of 3MPa low-pressure injection molding. The volume ratio of paraffin is 9-27%, oleic acid is 1-3%; water glass and alumina powder are used to coat the surface of the molded part with a 5-layer thick shell, and dry at 50°C-70°C for 6-8 hours; Wax removal and sintering are carried out on the molded body and the shell. The wax removal and sintering process is as follows: the wax removal heating rate is 2°C / min to 3°C / min, the wax removal temperature is 100°C to 120°C, the holding time is 240 min, and the sintering heating rate is 3°C / min~5℃ / min, sintering at a sintering temperature of 1050~1100℃ for 2~4 hours, and a cooling rate of 10℃ / min~20℃ / min; The prefabricated form is preheated ...

Embodiment 1

[0029] Put the green silicon carbide coarse powder with a particle size of 120-150 μm, the green silicon carbide fine powder with a particle size of 30-63 μm and the green silicon carbide micro-powder with a particle size of 6-12 μm into the mixer according to the volume ratio of 48%, 18% and 9%. 10 to 12 hours; then add additives and mold under the pressure of 3MPa low-pressure injection molding. The volume ratio of additives added to the raw materials during low-pressure injection molding is 22% of paraffin and 3% of oleic acid; coat the surface of molded parts with water glass and alumina powder Hang a 5-layer thick shell and dry it at 50°C to 70°C for 6 to 8 hours; then perform wax removal and sintering on the molded body and shell. / min, wax removal temperature 100℃~120℃, holding time 240 minutes, sintering heating rate 3℃ / min~5℃ / min, sintering at 1050~1100℃ for 2~4 hours, cooling rate 10℃ / min ~20°C / min; put the super-high volume fraction silicon carbide prefabricated for...

Embodiment 2

[0031]Put green silicon carbide coarse powder with a particle size of 150-180 μm, green silicon carbide fine powder with a particle size of 30-50 μm and green silicon carbide micro-powder with a particle size of 6-10 μm into a mixer according to the volume ratio of 50%, 20% and 10% and mix them 10 to 12 hours; then add additives and mold under 3MPa low-pressure injection molding pressure. The volume ratio of additives added to the raw materials during low-pressure injection molding is 18% paraffin and 2% oleic acid; coat the surface of the molding with water glass and alumina powder Hang a 5-layer thick shell and dry it at 50°C to 70°C for 6 to 8 hours; then perform wax removal and sintering on the molded body and shell. / min, wax removal temperature 100℃~120℃, holding time 240 minutes, sintering heating rate 3℃ / min~5℃ / min, sintering at 1050~1100℃ for 2~4 hours, cooling rate 10℃ / min ~20°C / min; put the super-high volume fraction silicon carbide prefabricated form with a shell m...

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PUM

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Abstract

The invention relates to an aluminum-silicon carbide composite material with ultrahigh volume fraction and a preparation method thereof. The aluminum-silicon carbide composite material reaches ultrahigh silicon carbide volume fraction, has low preparation cost, convenient process, good combination property and high reliability and can realize the near-net-shape forming of complex shapes and largesizes. The aluminum-silicon carbide composite material comprises the following components by volume percent: 46%-55% of green silicon carbide coarse powder, 16%-23% of green silicon carbide fine powder, 8%-12% of green silicon carbide micro powder, 8%-27% of metallic aluminum, 1.9%-2.7% of metallic silicon and 0.1%-0.3% of metallic magnesium, wherein the green silicon carbide coarse powder, the green silicon carbide fine powder and the green silicon carbide micro powder respectively have the grain diameters of 120-210 micrometers, 30-63 micrometers and 6-12 micrometers.

Description

1. Technical field: [0001] The invention relates to a composite material, in particular to an ultra-high volume fraction aluminum silicon carbide composite material and a preparation method thereof. 2. Background technology: [0002] In the background technology, the composite material composed of silicon carbide particles and aluminum alloy has excellent comprehensive properties such as high thermal conductivity, low expansion, high stiffness, and high strength, so it can replace traditional copper alloys, aluminum alloys, Kovar alloys, and tungsten copper materials. Materials are used in microelectronic packaging, power electronic packaging, microwave packaging, optoelectronic packaging and other fields. As the volume fraction of silicon carbide particles increases, the thermal expansion coefficient of the composite material is more matched to that of the electronic device. The thermal conductivity of silicon carbide particles with high thermal conductivity is higher, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622
Inventor 马俊立杨军
Owner 西安明科微电子材料有限公司
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