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Groove-grid-type insulated gate bipolar transistor with body electrode

A technology of bipolar transistors and body electrodes, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of reduced breakdown voltage of transistors, reduce peak electric field, reduce on-state loss, and increase breakdown voltage Effect

Inactive Publication Date: 2011-09-21
UNIV OF ELECTRONIC SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the trench gate IGBT, due to the trench gate, the electric field is easy to concentrate at the bottom of the trench gate, which reduces the breakdown voltage of the trench gate type insulated gate field effect transistor.

Method used

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  • Groove-grid-type insulated gate bipolar transistor with body electrode
  • Groove-grid-type insulated gate bipolar transistor with body electrode
  • Groove-grid-type insulated gate bipolar transistor with body electrode

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Embodiment Construction

[0029] A trench gate type insulated gate bipolar transistor with a body electrode, such as Figure 4 As shown, including metallized collector 1, P-type collector 2, N - Drift zone 3, P + Body region 4, P-type base region 5, N + Source region 6, trench polysilicon gate electrode 7, silicon dioxide gate oxide layer 8, metallized emitter 9, body electrode 10, silicon dioxide body electrode oxide layer 11; metallized collector 1 is located in the P-type collector area Back of 2, N - The drift region 3 is located on the front of the P-type collector region 2; N + source region 6 and P + The body region 4 is located side by side under the metallized emitter 9 and connected to the metallized emitter 9, wherein P + directly below body region 4 and N - Drift region 3 is connected, while N + source region 6 and N - The drift region 3 is separated by a P-type base region 5; the trench type polysilicon gate electrode 7 is located on the side of the metallized emitter 9 on the top ...

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Abstract

The invention discloses a groove-grid-type insulated gate bipolar transistor with a body electrode, belonging to the technical field of semiconductor power devices. In the invention, a groove-type polycrystalline silicon electrode is introduced into the traditional groove-grid-type insulated gate bipolar transistor; the defects of concentration of the electric field of the traditional groove-grid-type insulated gate bipolar transistor below a groove gate can be overcome through optimizing the voltage on the body electrode, thus effectively reducing the peak value electric field at the bottom of the groove gate, and improving the puncture voltage of the device; and when the device is in forward conduction, the voltage on the body electrode can form multiple sub accumulation layers outside a thick oxide layer of the body electrode, thus reducing the on-resistance, and lowering the on-state power losses in the forward conduction.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to an insulated gate bipolar transistor (IGBT). Background technique [0002] 1GBT (Insulate Gate Bipolar Transistor) insulated gate bipolar transistor is a MOS and bipolar device with MOS input and bipolar output functions. As a new type of power semiconductor device, it has become a new generation of mainstream products in the field of power electronics. IGBT not only has the advantages of high input impedance, low control power, simple driving circuit, and high switching speed of MOSFET tubes, but also has the advantages of high current density, low saturation voltage drop, and strong current handling capability of bipolar power transistors. Therefore, IGBT is widely used in induction cooker, UPS uninterruptible power supply, automotive electronic igniter, three-phase motor inverter, welding machine switching power supply and other products as power switch tube...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/41H01L29/06
Inventor 李泽宏张超刘小龙李婷姜贯军余士江
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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