Method for preparing thermoelectric material of ternary diamond structure

A technology of thermoelectric materials and diamond, which is applied in the manufacture/processing of thermoelectric devices, materials for the junction leads of thermoelectric devices, thermoelectric devices that only use the Peltier or Seebeck effect, etc., can solve the problems that the thermoelectric properties of bulk materials have not been reported, etc. , to achieve the effect of high density, high feasibility and strong operability

Active Publication Date: 2011-09-21
中科西卡思(苏州)科技发展有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] So far, the research on this kind of ternary compounds has basically stopped at the analysis of the crystal structure of the material [(1) G.Marcano, L.M.de Chalbaud, C.Rincon, and G.S.Perez, Materials Letters, 2002, 3, 151; (2) G.E.Delgado, A.J.Mora, G.Marcano, C.Rincon...

Method used

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  • Method for preparing thermoelectric material of ternary diamond structure
  • Method for preparing thermoelectric material of ternary diamond structure
  • Method for preparing thermoelectric material of ternary diamond structure

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Experimental program
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Embodiment 1

[0038] Cu powder (99.95%), Sn particles (99.999%) and Se particles (99.999%) are made of high-purity metal elemental raw materials according to Cu 2 SnSe 3 The stoichiometric ratio is weighed into a graphite crucible, and placed in a closed quartz glass tube, after vacuuming (less than 10 -2 Pa) Melt and seal with an oxygen-hydrogen flame, then slowly heat up the closed quartz glass tube containing the mixture to 900°C for melting, keep it warm for 24 hours, and then quench. The obtained sample (unopened tube) was directly annealed for 7 days at a temperature of 500°C. After the tube is opened, the sample is ground into powder, and SPS sintering is carried out at 530°C, the pressure is 60MPa, the heating rate is 50°C / min, and the holding time is 10 minutes.

[0039] The thermal performance test shows that the material has very low thermal conductivity, especially at high temperature, when it reaches 800K, the thermal conductivity is 0.845W / mK, and the electrical conductivity...

Embodiment 2

[0041] Cu powder (99.95%), Sn grains (99.999%), In grains and Se grains (99.999%) are made of high-purity metal elemental raw materials according to Cu 2 sn 0.9 In 0.1 Se 3 The stoichiometric ratio is weighed into a graphite crucible, and placed in a closed quartz glass tube, after vacuuming (less than 10 -2 Pa) Melt and seal with an oxygen-hydrogen flame, then slowly heat up the closed quartz glass tube containing the mixture to 900°C for melting, keep it warm for 24 hours, and then quench. The obtained sample (unopened tube) was directly annealed for 7 days at a temperature of 500°C. After the tube is opened, the sample is ground into powder, and SPS sintering is carried out at 530°C, the pressure is 60MPa, the heating rate is 50°C / min, and the holding time is 5 minutes.

[0042] The thermal performance test shows that the material also has a very low thermal conductivity after doping low-valence metal In at the B site (Sn), which is 0.7W / mK at 800K, and the electrical c...

Embodiment 6

[0047] Cu powder (99.95%), Sn grains (99.999%), Bi powder (99.999%) and Se grains (99.999%) are prepared according to Cu 2 SnSe 2.55 Bi 0.45 The stoichiometric ratio is weighed into a graphite crucible, and placed in a closed quartz glass tube, after vacuuming (less than 10 -2 Pa) Melt and seal with an oxygen-hydrogen flame, then slowly heat up the closed quartz glass tube containing the mixture to 1000°C for melting, and keep it at 1000°C for 48 hours before quenching. The obtained sample (unopened tube) was directly annealed in a muffle furnace for 240 h at a temperature of 600 °C. After the tube is opened, the sample is ground into powder, and SPS sintering is carried out at 500°C, the pressure is 50MPa, the heating rate is 60°C / min, and the holding time is 10 minutes.

[0048] Thermal performance tests show that the material has excellent thermoelectric properties.

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Abstract

The invention relates to a method for preparing a thermoelectric material of a ternary diamond structure. The method comprises the steps of: raw material preparation, heat-preservation reaction, annealing treatment, spark plasma sintering and the like. In the invention, by applying a fusion-process preparation technology, rapid spark plasma sintering and other methods and controlling technological parameters, the method for preparing the thermoelectric material of the ternary diamond structure is realized and has the advantages of simple and convenient technology, short flow time, high feasibility and good thermoelectric performance, and the thermoelectric material of the ternary diamond structure, prepared with the method provided by the invention, has favorable thermoelectric performance and can be used as a p-type thermoelectric material. The method has the characteristics of simplicity, strong operability, low cost, good industrial prospect and the like.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and in particular relates to a preparation method of a thermoelectric material with a ternary diamond-like structure. Background technique [0002] Thermoelectric materials (also known as thermoelectric materials, thermoelectric materials) are functional materials that convert heat and electricity based on the Seebeck effect and the Peltier effect. It has no moving parts, no noise, Small size, high reliability, long life and other characteristics play an important role in technical fields such as waste heat power generation. The thermoelectric conversion efficiency mainly depends on the dimensionless performance index of the material, that is, the ZT value (ZT=α 2 σT / K, where α is the Seebeck coefficient; σ is the electrical conductivity; K is the thermal conductivity, K=electronic thermal conductivity + lattice thermal conductivity, T is the absolute temperature), the higher the ZT value...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/28H01L35/16
Inventor 陈立东史啸亚范静柏胜强吴汀
Owner 中科西卡思(苏州)科技发展有限公司
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