Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for processing wafer

A processing method and wafer technology, applied in the manufacturing of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as yield reduction, line speed, chip breakage, etc.

Inactive Publication Date: 2011-10-05
NITTO DENKO CORP
View PDF9 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, higher adhesive strength is required when the wafer is thinned. Therefore, when picking up the diced chip, it is necessary to provide a force against the high adhesive strength regardless of whether the dicing protection film is adhered to the chip. When the pick-up conditions are provided by providing such a force, chip cracks, cracks, line speed of the manufacturing process, and yield reduction may occur further.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for processing wafer
  • Method for processing wafer
  • Method for processing wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0278] The surface protection sheet for dicing used in the method of the present invention will be described in detail below based on examples, but the present invention is not limited to the use of the surface protection sheet for dicing of these examples. In addition, the shear elastic modulus of the elastic layer and the rigid film layer, and the adhesive force of the elastic layer to the shrinkable film were measured as follows. In addition, r / L, which is an index for judging whether or not it can function as a cylindrical wound body, is defined by the method shown below.

[0279] Determination of Young's modulus (80°C) of rigid film layer

[0280] The Young's modulus of the rigid film layer is measured by the following method in accordance with JIS K7127. As a tensile tester, Autograph AG-1kNG (with a heating mantle) manufactured by Shimadzu Corporation was used. A rigid film cut to a length of 200 mm×width of 10 mm was mounted at a chuck pitch of 100 mm. After formi...

manufacture example 1

[0292] Production of active energy ray-curable adhesive layer (1)

[0293] Acrylic acid-based polymer [composition: 2-ethylhexyl acrylate: morpholine acrylate: 2-hydroxyethyl acrylate = 75:25:22 (weight ratio) copolymerization] derived from 2-acrylic acid 50% of the hydroxyl group of hydroxyethyl ester is bonded with methacryloyloxyethyl isocyanate (2-isocyanatoethyl methacrylate) to produce an acrylic polymer with methacrylate group on the side chain .

[0294] 100 parts by weight of an acrylic polymer having a methacrylate group on the side chain, and 15 parts by weight of ARONIX M320 (manufactured by Toagosei Co., Ltd.; trimethylolpropane PO modified (n ≈ 2) triacrylate), and 1 part by weight of photoinitiator (manufactured by Ciba Geigy, trade name "IRGACURE 651"), and 1 part by weight of isocyanate-based crosslinking agent (trade name "CORONATE L" ) were mixed to prepare an active energy ray-curable adhesive.

[0295] The obtained active energy ray-curable adhesive w...

manufacture example 2

[0297] Production of inactive energy ray-curable adhesive layer (1)

[0298] 0.7 parts by weight of an epoxy-based crosslinking agent (manufactured by MITSUBISHI GAS CHEMICAL COMPANY, INC. name "TETRAD C"), and 2 parts by weight of an isocyanate-based crosslinking agent (trade name "CORONATE L") to prepare a non-active energy ray-curable adhesive.

[0299] Use an applicator to coat the obtained inactive energy ray-curable adhesive on a release sheet (manufactured by MITSUBISHI PLASTICS, INC., trade name "MRF38"), and then dry volatiles such as solvents to obtain A laminate of an inactive energy ray-curable pressure-sensitive adhesive layer having a thickness of 30 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for processing wafer includes sticking a surface protection sheet for dicing onto a surface of a wafer and cutting the sheet together with the wafer to protect the surface of the wafer from being contaminated by deposition of a dust such as swarf and the like, and picking up a chip without causing cracking or chipping in the chip after a dicing step, in the steps of dicing the wafer and then picking up the chip. The method includes: sticking the surface protection sheet for dicing onto the surface of the wafer; cutting the sheet together with the wafer; subsequently giving a stimulus to the surface protection sheet for dicing to peel the end of the chip from the dicing tape; and then picking up the chip.

Description

technical field [0001] The present invention relates to a process for dicing a semiconductor wafer to form individual chips. Background technique [0002] In the wafer singulation process (hereinafter referred to as dicing process) performed after the back grinding process, the circuit formation surface of the wafer is currently exposed. Therefore, it is assumed that cutting water during dicing, dust such as cutting chips generated by wafer cutting, etc. adhere to the circuit forming surface, and the circuit forming surface on the exposed electronic component surface is contaminated. There is a possibility of causing a defect due to such contamination. In this case, a protective tape is attached to the circuit formation surface of the wafer, and the wafer is diced together with the protective tape to protect the electronic components from dust such as cutting chips. However, it is difficult to peel and remove the protective tape from the singulated wafers with the conventi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/78
CPCH01L2221/68331H01L2221/68336H01L2924/09701H01L21/6836H01L23/562H01L21/78H01L2924/0002H01L2924/00
Inventor 杉村敏正西尾昭德木内一之
Owner NITTO DENKO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com