Preparation method for P-type CuAlO2 semiconductor material

A bulk material and semiconductor technology, applied in the field of preparation of CuAlO2 inorganic semiconductor bulk material, can solve problems such as adverse effects of materials, and achieve the effects of low pressure, simple process, and large output

Inactive Publication Date: 2012-10-31
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in Cu 2 O powder and Al 2 o 3 When the powder raw material is in a molar ratio of 1:1, if the solid phase reaction is carried out in the atmosphere or an oxygen atmosphere, CuAl may be caused by excessive oxygen 2 o 4 , CuO and other non-CuAlO 2 phase formation, instead for the single crystal phase CuAlO 2 The availability of materials adversely affects

Method used

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  • Preparation method for P-type CuAlO2 semiconductor material
  • Preparation method for P-type CuAlO2 semiconductor material
  • Preparation method for P-type CuAlO2 semiconductor material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) Cu with a purity of 99.99% 2 O powder and Al with a purity of 99.999% 2 o 3 The powder is dosed at a molar ratio of 1:1, and then put into a ball mill jar for full grinding to obtain a uniformly mixed powder with a particle size not exceeding 300 nm.

[0035] (2) Using a powder tablet press, hold the pressure for 3 minutes under a static compression pressure of 30 MPa, and press the uniformly mixed powder into a cylindrical target blank with a diameter of about 3 cm and a height of 2 mm.

[0036] (3) Place the pressed target blank in the alumina ceramic boat, and then push the ceramic boat into the center of the alumina ceramic tube furnace. One end of the ceramic tube is connected to the argon gas cylinder through a set of sealing flanges and a vacuum pipeline with an inflation valve; the other end of the ceramic tube is connected to a vacuum pump through another set of sealing flanges and a vacuum pipeline with an air release valve .

[0037] (4) Turn on the v...

Embodiment 2

[0047] (1) Cu with a purity of 99.99% 2 O powder and Al with a purity of 99.999% 2 o 3 The powder is dosed at a molar ratio of 1:1, and then put into a ball mill jar for full grinding to obtain a uniformly mixed powder with a particle size not exceeding 300 nm.

[0048] (2) Using a powder tablet press, hold the pressure for 2 minutes under a static compression pressure of 30 MPa, and press the uniformly mixed powder into a cylindrical billet with a diameter of about 3 cm and a height of 4 mm.

[0049] (3) Place the pressed target blank in the alumina ceramic boat, and then push the ceramic boat into the center of the alumina ceramic tube furnace. One end of the ceramic tube is connected to the argon gas cylinder through a set of sealing flanges and a vacuum pipeline with an inflation valve; the other end of the ceramic tube is connected to a vacuum pump through another set of sealing flanges and a vacuum pipeline with an air release valve .

[0050] (4) Turn on the vacuum ...

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Abstract

The invention brings forward a simple and rapid method for preparing a high quality CuAlO2 semiconductor material with P-type conductivity. The method comprises the following steps: mixing CuAlO2 powder with Al2O3 powder according to a mol ratio of 1:1; putting the mixture into a ball milling tank to carry out ball milling for 3 to 5 hours so as obtain an evenly mixed powder of the raw materials,wherein the particle size of the powder is no more than 300 nm; compressing the powder with a powder compressing machine and pressurizing the powder under 30 MPa static pressing pressure for 1 to 3 min to obtain a cylindrical target blank material with a diameter of about 3 cm and a height of 2 to 5 mm; sintering the target blank material in a vacuum ceramic tubular furnace in the presence of argon under the condition of optimized heating and cooling rate, holding temperature and reaction air pressure so as to obtain a pure CuAlO2 material. The P-type CuAlO2 semiconductor material prepared inthe invention has the advantages of short sintering time, great output and high purity, is an ideal raw material for the preparation of high quality P-type CuAlO2 films, and has a good application prospect in the field of vacuum plating.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, in particular to a CuAlO with P-type conductivity 2 Preparation method of inorganic semiconducting body material. Background technique [0002] The emergence of transparent conductive oxides (TCOs) has opened up a new field of optoelectronic device research. For example, TCO thin films have been widely used in transparent electrodes of solar cells, flat-panel displays, special function window coatings and other optoelectronic devices due to their high transparency and high conductivity in the visible light range, but TCO is mostly The relative scarcity of n-type conductive materials and p-type conductive TCOs seriously restricts the development and application of transparent oxide semiconductor related devices, and CuAlO 2 As an artificially prepared P-type semiconductor material with photovoltaic performance of P-type semiconductor material with delafossite crystal structure. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/44C04B35/622
Inventor 邱东江范文志王俊蒋银土丁扣宝施红军翁圣
Owner ZHEJIANG UNIV
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