Multi-circle arranged IC (integrated circuit) chip packaging member and producing method thereof
A technology of chip package and production method, which is applied in the direction of electrical components, electric solid devices, semiconductor devices, etc., can solve the problems that cannot satisfy ultra-thin package products, cannot meet high density, affect high-frequency applications, etc., and achieve signal transmission Fast, good thermal performance, short heat conduction distance
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[0053] Example 1
[0054] (1) The thickness of the wafer is reduced by 250μm
[0055] Rough grinding thickness range, from original wafer to final thickness + film thickness + 50μm, rough grinding speed 5μm / s; fine grinding thickness range, from final thickness + film thickness + 50μm to final wafer thickness + film thickness , Refining speed: 0.4μm / s, wafer thinning method is ordinary QFN thinning, 6-inch to 8-inch wafer VG-502MKⅡ8B automatic thinning machine, 8-inch to 12-inch wafer using PG300RM / TCN;
[0056] (2) Dicing
[0057] 8-inch and below wafers use DISC3350 or double blade dicing machine, 8-inch to 12-inch wafers use A-WD-300TXB dicing machine dicing machine. Apply anti-fragment, anti-crack scribing software control technology, and control the scribing feed speed to ≤10mm / s;
[0058] (3) Single chip flip-chip loading and reflow soldering
[0059] Single chip flip chip loading, using IC chip 3 with bumps, flip chip bonding is performed on a carrier frame with a thickness of 8...
Example Embodiment
[0074] Example 2:
[0075] (1) The thickness of the wafer is reduced by 250μm
[0076] Rough grinding thickness range, from original wafer to final thickness + film thickness + 50μm, rough grinding speed 2μm / s; fine grinding thickness range, from final thickness + film thickness + 50μm to final wafer thickness + film thickness , Refining speed: 0.9μm / s, wafer thinning method is ordinary QFN thinning, 6-inch to 8-inch wafer VG-502MKⅡ8B automatic thinning machine, 8-inch to 12-inch wafer using PG300RM / TCN;
[0077] (2) Dicing
[0078] Same as in Example 1;
[0079] (3) Single chip flip-chip loading and reflow soldering
[0080] Same as in Example 1;
[0081] (4) Underfill
[0082] Select materials with low thermal expansion coefficient, heat the lower filler to 80℃, use vacuum technology to underfill the bumps 4 and the pins in the frame, and finally bake the finished product after the underfill is completed in a QFN universal baking oven Bake for about 15 minutes;
[0083] (5)~(7)
[0084] ...
Example Embodiment
[0091] Example 3
[0092] (1)~(7)
[0093] Same as in Example 1;
[0094] (8) Separate pins
[0095] Separate the connecting ribs between the pins by laser cutting method, the cutting depth is 0.13μm;
[0096] (9) Electroplating
[0097] Electroplating is the same as ordinary QFN package, and 7μm pure tin is directly plated in the electroless plating system, and the baking conditions and methods after electroless plating are the same as those of ordinary QFN package.
[0098] (10) Cutting and separating products
[0099] The same as in Example 1.
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