Crystalline silicon solar battery three-layer antireflection film and preparation method thereof

A technology of solar cells and anti-reflection coatings, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low photoelectric conversion efficiency of solar cells, difficulty in achieving anti-reflection effects, low reflectivity of solar cells, etc., and achieve photoelectric conversion The effect of improving efficiency, improving photoelectric conversion efficiency, and simple preparation method

Active Publication Date: 2014-04-09
BAODING GUANGWEI GREEN ENERGY TECH CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

At present, what has been industrialized on a large scale is to use high-temperature vapor phase chemical deposition PECVD equipment to directly deposit silicon nitride on the surface of the silicon wafer after diffusion. The silicon nitride film has a low anti-reflection effect, but the silicon nitride anti-reflection film The reflectivity of silicon solar cells is not very low, and it is difficult for other conventional single-layer anti-reflection coating materials to achieve good anti-reflection effects. Therefore, the photoelectric conversion efficiency of existing solar cells is still very low. How to further reduce the reflectivity becomes a big problem

Method used

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  • Crystalline silicon solar battery three-layer antireflection film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1, such as figure 1 As shown, a three-layer anti-reflection film for a crystalline silicon solar cell is composed of three layers of films. The first layer is a silicon dioxide film 4 on the surface of a solar cell crystalline silicon 5 with a thickness of 20 nm and a refractive index of 1.15; The second layer is a titanium dioxide and silicon dioxide composite film 3 with a thickness of 80nm and a refractive index of 1.30; the third layer is a nano-titanium dioxide film 2 with a thickness of 50nm and a refractive index of 2.12. 1 is a grid line.

[0021] Anti-reflective coating is applied to the crystalline silicon wafers after the steps of cleaning and fabricating, diffusing to prepare PN junctions, etching and removing the PN junctions around the silicon wafer, and cleaning and removing the phosphosilicate glass, which includes the following steps:

[0022] 1. In the diffusion furnace, a layer of silicon dioxide film with a thickness of 20nm and a refractive ...

Embodiment 2

[0025] Example 2, such as figure 1 As shown, a three-layer anti-reflection film for a crystalline silicon solar cell is composed of three layers of films. The first layer is a silicon dioxide film 4 on the surface of a solar cell crystalline silicon 5 with a thickness of 30 nm and a refractive index of 1.25; The second layer is a titanium dioxide and silicon dioxide composite film 3 with a thickness of 90nm and a refractive index of 1.45; the third layer is a nano-titanium dioxide film 2 with a thickness of 60nm and a refractive index of 2.28. 1 is a grid line.

[0026] Coating anti-reflection film on the crystalline silicon wafer after cleaning and making texture, diffusing to prepare PN junction, etching and removing the PN junction around the crystalline silicon wafer, cleaning and removing the phosphosilicate glass, comprises the following steps:

[0027] 1. In the diffusion furnace, a layer of silicon dioxide film with a thickness of 30nm and a refractive index of 1.25 is...

Embodiment 3

[0030] Example 3, such as figure 1 As shown, a three-layer anti-reflection film for a crystalline silicon solar cell is composed of three layers of films. The first layer is a silicon dioxide film 4 on the surface of a solar cell crystalline silicon 5 with a thickness of 23nm and a refractive index of 1.18; The second layer is a titanium dioxide and silicon dioxide composite film 3 with a thickness of 85nm and a refractive index of 1.4; the third layer is a nano-titanium dioxide film 2 with a thickness of 55nm and a refractive index of 2.15. 1 is a grid line.

[0031] Anti-reflective coating is applied to the crystalline silicon wafers after the steps of cleaning and fabricating, diffusing to prepare PN junctions, etching and removing the PN junctions around the silicon wafer, and cleaning and removing the phosphosilicate glass, which includes the following steps:

[0032] 1. In the diffusion furnace, a silicon dioxide film with a thickness of 23nm and a refractive index of 1....

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Abstract

The invention discloses a crystalline silicon solar battery three-layer antireflection film which is composed of three layers of films, wherein the first layer is a silicon dioxide thin film on the surface of a silicon slice, wherein the silicon dioxide thin film has the thickness of 20-30nm and the refractive index of 1.15-1.25; the second layer is a titanium dioxide and silicon dioxide composite thin film with the thickness of 80-90nm and the refractive index of 1.30-1.45; and the third layer is a nanometer titanium dioxide thin film with the thickness of 50-60nm and the refractive index of 2.12-2.28. The silicon dioxide thin film at the first layer is prepared by adopting a thermal oxidation method, and the composite thin film at the second layer and the titanium dioxide thin film at the third layer are both prepared by adopting a sol-gel coating method. According to the invention, the three-layer antireflection film is adopted, the reflection of the surface of a battery to light is reduced, and the photoelectric conversion efficiency of a solar battery is improved.

Description

technical field [0001] The invention relates to a solar cell manufacturing technology, in particular to an anti-reflection film for a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] In order to improve the photoelectric conversion efficiency of crystalline silicon solar cells, the reflection loss of light on the surface of the cell should be reduced and the transmission of light should be increased. The production of anti-reflection film directly affects the reflectivity of solar cells to incident light, and plays a very important role in improving the efficiency of solar cells. At present, what has been industrialized on a large scale is to use high-temperature vapor phase chemical deposition PECVD equipment to directly deposit silicon nitride on the surface of the silicon wafer after diffusion. The silicon nitride film has a low anti-reflection effect, but the silicon nitride anti-reflection film The reflectivity of silicon s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 王月勤王连红
Owner BAODING GUANGWEI GREEN ENERGY TECH CO LTD
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