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Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor

A circuit simulation, cross-shaped technology, applied in the fields of instruments, electrical digital data processing, special data processing applications, etc., can solve the problems of not providing a junction field effect transistor simulation model, and unable to simulate CMOS circuits.

Active Publication Date: 2011-11-09
南通中选智科环境科技有限公司
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Problems solved by technology

However, the application of this simulation model has great limitations, mainly because most standard CMOS process lines do not provide simulation models for junction field effect transistors, and circuit designers naturally cannot use this model for CMOS circuit simulation.

Method used

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  • Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor
  • Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor
  • Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor

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Embodiment

[0136] The model uses the analog hardware description language Verilog_A to complete the behavior and function description, and only needs to determine a dozen parameters to perform circuit simulation. The AMS 0.8μm CMOS process parameters (shown in Table 1) were substituted into the model, and the circuit simulation was completed on the Specter simulator of Cadence.

[0137] In order to verify the accuracy of the model, the simulation results of the model were compared with the experimental measurement results under the same process conditions.

[0138] (1) Under the conditions of room temperature and no package stress, when the input bias current is 1mA and the applied vertical magnetic field increases from 1mT to 15mT, the comparison between the model simulation results and the measured results is as follows Figure 8 shown. It can be seen that the current-dependent sensitivity S obtained by the model simulation I It is 74.6V / AT, which deviates very little from the experi...

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Abstract

The invention aims to provide a circuit simulation model of a crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor. The model has simple structure and high precision and can be used for simulation on a universal electronic circuit simulator. The circuit simulation model is characterized in that 12 nonlinear N well resistors, 8 PN junction capacitors and 4 voltage sources controlled by current form a centrosymmetric structure network; a crossed device is divided into a central area and four interdigital areas; the active area of the central area is represented by an RH-RD-CB network; and the active areas of the interdigital areas are represented by RF-CF networks. The model nearly takes all the physical and geometrical effects of the Hall sensor into consideration, can simulate various direct current, alternating current and transient characteristics of the Hall sensor and is applicable to engineering circuits actually containing Hall devices and suitable for mass production.

Description

technical field [0001] The invention relates to a general circuit simulation model of a cross-shaped CMOS integrated Hall magnetic sensor. The model almost considers various physical and geometric effects of the Hall sensor, can simulate various DC, AC and transient characteristics of the Hall sensor, and can complete the device and circuit simulation together with other electronic circuits on a general-purpose Spice simulator. Hybrid simulation. Background technique [0002] The Hall magnetic field sensor is a device that uses the principle of the Hall effect to realize magnetoelectric conversion, and is often used for the detection of magnetic fields. The Hall magnetic field sensor manufactured by the CMOS process not only has the advantages of simple process and low cost, but also can be integrated with the control and drive circuits in the same chip, so as to realize the low power consumption, high reliability and miniaturization of the sensor microsystem . Nowadays, ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 徐跃赵菲菲吴金山吴佩莉何迟王凱玄
Owner 南通中选智科环境科技有限公司
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