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High-performance directional heat conduction copper-base diamond composite material and preparation method thereof

A technology of directional heat conduction and composite materials, which is applied in the direction of metal material coating process, semiconductor devices, semiconductor/solid device components, etc., to achieve the effects of high melting point, easy welding, good ductility and plasticity

Active Publication Date: 2011-11-16
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, many studies focus on combining diamond micropowder with metal, and using the high thermal conductivity of diamond to improve the thermal conductivity of the composite material, but the thermal conductivity obtained by this method is mostly 200-600W·K -1 m -1 , much lower than the diamond

Method used

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  • High-performance directional heat conduction copper-base diamond composite material and preparation method thereof
  • High-performance directional heat conduction copper-base diamond composite material and preparation method thereof
  • High-performance directional heat conduction copper-base diamond composite material and preparation method thereof

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Embodiment 1

[0043] First, use the copper plate as the copper substrate 13, such as figure 1 As shown, a series of columnar through-holes 14 parallel to each other are drilled on the copper base 13. The spacing of the columnar through-holes 14 is 0.5-50 mm, wherein the thickness of the copper base 13 is 0.1-30 mm, and the diameter of the columnar through-holes 14 is 0.5-50 mm. 10mm; Then, adopt chemical vapor deposition technology to deposit diamond rod 15 in columnar through hole, make diamond fill all columnar through hole 14, form columnar diamond array, as figure 2 as shown, image 3 It is a schematic diagram of diamond SEM image of copper-based diamond composite obtained by hot wire chemical vapor deposition.

[0044] Before chemical vapor deposition, the sample was ultrasonically treated with diamond powder acetone suspension for 5-60 minutes, the surface of the sample was cleaned with acetone and dried with a fan, and then the diamond film was prepared by hot wire chemical vapor d...

Embodiment 2

[0046] First, if Figure 4 As shown, a tungsten wire is used as a linear core 16, and a continuous diamond film 17 is grown on the surface of the core by chemical vapor deposition technology, thereby obtaining a cylindrical cored diamond rod 18. The diameter of the linear core 16 is 0-30mm, and the thickness of the diamond rod is 0.25 ~ 5mm, such as Figure 5 as shown, Image 6 The SEM image of the diamond rod surface of the cored diamond rod, Figure 7 It is the SEM image of the diamond rod cross-section of the cored diamond rod; then, with the copper plate as the copper substrate 13, a series of parallel columnar through holes 14 are drilled on the copper substrate 13, and the spacing of the columnar through holes 14 is 0.5~50mm. The diameter of the hole 14 matches the cylindrical cored diamond rod 18, wherein the thickness of the copper substrate 13 is 0.1 to 100 mm; then, the cylindrical cored diamond rod 18 is pressed into the columnar through hole 14 of the copper subs...

Embodiment 3

[0049] First, if Figure 4 As shown, with filamentary or rod-shaped copper, tungsten, molybdenum or titanium as linear core 16, adopt chemical vapor deposition technology to grow continuous diamond film 17 on the core surface, thereby obtain cylindrical cored diamond rod 18, linear core 16 The diameter is 0.1 ~ 30mm, the thickness of the diamond film is 0.25 ~ 5mm, such as Figure 5 Shown; Then, with the thin copper sheet 19 as the substrate, a series of parallel columnar through holes are drilled on the substrate, the diameter of the hole matches the cylindrical cored diamond rod 18, and the thickness of the thin copper sheet 19 is 0.0001 ~ 1mm; then ,like Figure 9 As shown, the cylindrical cored diamond rod 18 is pressed into the columnar through hole of the thin copper sheet 19, one end of the cylindrical cored diamond rod 18 is flush with the thin copper sheet 19, and the other end is higher than the thin copper sheet 19, and then passed Electrodeposition technology uni...

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Abstract

The invention discloses a high-performance directional heat conduction copper-base diamond composite material and a preparation method thereof. A plurality of diamond sticks are distributed on a copper base body in parallel in the same direction; the diameters of the diamond sticks are 0.5 to 10 millimeters; and distances among the diamond sticks are 0.5 to 50 millimeters. As the plurality of columnar diamond sticks with high heat conduction rate are arranged in the copper base body in the same direction, the composite material has high directional heat conduction performance along the direction; and the composite material can be used as electronic package, heat sink materials and the like and can solve the problem of package of high-temperature, high-frequency and high-power electronic devices.

Description

technical field [0001] The invention relates to a diamond composite material, in particular to a high-performance oriented thermally conductive copper-based diamond composite material, and also relates to a preparation method of the high-performance oriented thermally conductive copper-based diamond composite material. Background technique [0002] The allowable operating temperature range of large-scale integrated circuits is usually 0-70°C, and the reliable operating temperature range is 0-40°C. When the temperature of the heating surface of the semiconductor device rises to 100°C, the performance begins to decline; when the temperature increases by 25°C from 100°C, the failure rate will increase by 5 to 6 times. However, the heat generated due to the high-speed operation of the circuit can even make the local temperature of the circuit reach 400°C. In recent years, the development of wide-bandgap semiconductor devices represented by high-temperature semiconductor materia...

Claims

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Application Information

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IPC IPC(8): H01L23/373C23C16/27
CPCH01L2924/0002H01L2924/00
Inventor 魏秋平余志明刘学璋尹登峰
Owner CENT SOUTH UNIV
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