Semiconductor lithography method

Abstract

The invention provides a semiconductor photolithography method. A semiconductor photolithography method according to the present invention comprises: a first hard mask layer coating step for coating a hard mask layer on a silicon wafer; a photoresist layer coating step for coating the hard mask A photoresist layer is coated on the film layer; a photoresist layer etching step is used to etch the photoresist layer; a hard mask layer etching step is used to utilize photoresist The photoresist layer after the photoresist layer etching step etching hard mask layer is etched; The second hard mask layer coating step is used for the pattern after the hard mask layer etching step etching coating the second hard mask layer; a gap etching step, used to etch the pattern gap coated with the second hard mask layer; and a silicon chip etching step, utilizing the first Two hard mask layers are used to etch the silicon wafer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a semiconductor photolithography method. Background technique [0002] Photolithography technology has always played a pivotal role in the manufacture of integrated circuits (IC). With the improvement of technical requirements for integrated circuit products, photolithography technology also needs to continuously improve the resolution to produce smaller feature sizes. The photolithography process is a process often used in the semiconductor manufacturing process. Through the photolithography process, the characteristic pattern is finally formed on the wafer. The goal of the photolithography process is to generate dimensionally accurate feature patterns on the wafer through pattern transfer according to the requirements of the circuit design. [0003] The lithography process often uses a stepper projection lithography machine (Stepper). ...

AI Technical Summary

Problems solved by technology

[0005] However, with the reduction of laser wavelength and the improvement of focusing ability, the absorption of energy by the mask will also increase accordingly and may be damaged, so the difficulty of making the mask will increase day by day

Therefore, the use of deep ultraviolet DUV instead of mid-ultraviolet MUV will bring difficulties in the production of masks

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