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Method for preparing diamond

A diamond and equipment technology, applied in the field of diamond preparation with atomic layer deposition equipment, can solve the problems of high impurity amount and low dependence

Active Publication Date: 2013-07-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The CVD method activates raw materials by means of combustion, plasma, or hot wire, etc., so that the raw materials are decomposed and self-deposited to prepare; this method has the advantage of low dependence on temperature and pressure, and a wide range of sources. The impurity content of the film made by the PVD method is less, but still contains a higher amount of impurities

Method used

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  • Method for preparing diamond
  • Method for preparing diamond

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Embodiment 1

[0029] The present embodiment provides a kind of preparation method of diamond, specifically comprises the following steps:

[0030] Step 101, placing the silicon (111) substrate cleaned by the standard solution in the reaction chamber of the atomic layer deposition equipment; wherein, the standard solution refers to: No. 1 solution, concentrated sulfuric acid: hydrogen peroxide = 4:1; No. 2 solution, ammonia water :Purified water:hydrogen peroxide=1:5:1; No. 3 solution, hydrochloric acid:hydrogen peroxide:purified water=1:1:6;

[0031] Step 102, using hydrogen as a carrier gas, transporting formaldehyde into the reaction chamber of the atomic layer deposition device; wherein the flow rate of hydrogen is 20 sccm-100 sccm. The flow rate of formaldehyde is 1sccm-10sccm, the volume ratio of hydrogen to formaldehyde is 40:1-20:1; hydrogen acts as carrier gas and activator in this step;

[0032] Step 103, plasma discharge is performed in the reaction chamber of the atomic layer de...

Embodiment 2

[0036] The present embodiment provides a kind of preparation method of diamond, specifically comprises the following steps:

[0037] Step 101, placing the silicon (111) substrate cleaned with the standard solution in the reaction chamber of the atomic layer deposition equipment;

[0038] Step 102, using hydrogen as a carrier gas, transporting methane into the reaction chamber of the atomic layer deposition device; wherein the flow rate of hydrogen is 5 sccm-50 sccm. The flow rate of methane is 10sccm-100sccm, and the volume ratio of hydrogen to methane is 40:1-20:1; hydrogen acts as carrier gas and activator in this step;

[0039] Step 103, plasma discharge is performed in the reaction chamber of the atomic layer deposition equipment, and the discharge power is controlled between 20W-150W. On the one hand, in order to control the decomposition amount of the precursor, and on the other hand, in order to control the ratio of the decomposed carbon and hydrogen atoms, so that The...

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Abstract

The invention relates to the technical field of diamond preparation, in particular to a method for preparing diamond by using atomic layer deposition equipment. The method specifically comprises the following steps: putting a silicon substrate in a reaction chamber of the atomic layer deposition equipment; transporting a carbon-containing precursor to the reaction chamber of the atomic layer deposition equipment by way of carrier gas transport; and accumulating carbon atoms in the carbon-containing precursor on the silicon substrate through plasma discharge to spontaneously form a diamond structure. The method has the following beneficial effects that: the diamond can be prepared under a low-temperature and low-pressure condition by utilizing the atomic layer deposition equipment and common carbon sources; and the impurity content and structural integrity of the diamond can be controlled.

Description

technical field [0001] The invention relates to the technical field of diamond preparation, in particular to a method for preparing diamond by atomic layer deposition equipment. Background technique [0002] Diamond, commonly known as diamond, is an allotrope of graphite, which is one of the hardest substances in nature. It has the characteristics of superhardness, wear resistance and fast heat conduction. In addition, due to the high refractive index, diamonds shine brightly under the light, making them the favorite gemstones for women. In industrial production, diamond is mainly used to manufacture drill bits and grinding tools. [0003] At present, the methods for preparing diamond mainly include high-temperature and high-pressure conversion of graphite, PVD, and CVD methods. The high temperature and high pressure method consumes more energy, and the quality of the film prepared by cutting is not good. The PVD method obtains diamond by sputtering a graphite target, but...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/455C23C16/50
Inventor 夏洋饶志鹏万军刘键李超波陈波黄成强石莎莉李勇滔
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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