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Near-infrared quantum cutting transparent film and preparation method thereof

A quantum tailoring, transparent film technology, applied in chemical instruments and methods, ion implantation plating, coating and other directions, can solve the problems of serious powder scattering, limit the practical application of solar cells, poor transparency, etc., to improve the conversion efficiency, Improve the effect of low work efficiency and improve utilization efficiency

Inactive Publication Date: 2012-01-18
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But now people's research on down-conversion materials is still mainly in powder, because the powder has serious scattering of incident light and poor transparency, which limits its practical application in solar cells.

Method used

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  • Near-infrared quantum cutting transparent film and preparation method thereof
  • Near-infrared quantum cutting transparent film and preparation method thereof
  • Near-infrared quantum cutting transparent film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) in Y 2 o 3 Add Bi to the powder 2 o 3 Powder and Yb 2 o 3 powder, where Bi 2 o 3 Powder mole fraction is 0.25%, Yb 2 o 3 The molar fraction of the powder is 2.5%, and then mixed by ball milling, dried and calcined at 1200°C for 12 hours, and the powder is pressed into a ceramic target by hot pressing. The XRD pattern of its ceramic target material (see figure 1 ) exactly matches Y 2 o 3 PDF 41-1105 Diffraction Standard Spectrum.

[0023] (2) Y made by step (1) 2 o 3 :Bi, Yb ceramic target, using laser pulse deposition method, using silicon wafer as substrate, passing O with a purity of 99.999% 2 , the substrate temperature is 500°C, the target-base distance is 6cm, the working pressure is 1Pa, the laser energy is 350mJ / pulse, and the deposition time is 90min. get pure phase Y 2 o 3 film, its XRD pattern is shown in figure 2 . Use FLS920 fluorescence spectrometer to measure the emission spectrum at room temperature under the excitation condition o...

Embodiment 2

[0025] Substrate temperature is 700 ℃, and other preparation conditions are the same as embodiment 1, and the XRD pattern of obtained thin film is shown in image 3 . Use FLS920 fluorescence spectrometer to measure the emission spectrum at room temperature under the excitation condition of 331nm, it is observed that the corresponding Yb 3+ : 2 f 5 / 2 → 2 f 7 / 2 Transition quantum tailoring near-infrared light emission band (central wavelength 976nm). Its quantum efficiency has been measured to exceed 152%.

Embodiment 3

[0027] (1) in Y 2 o 3 Add Bi to the powder 2 o 3 Powder and Yb 2 o 3 powder, where Bi 2 o 3 Powder mole fraction is 0.25%, Yb 2 o 3 The molar fraction of the powder is 2.5%, and then mixed by ball milling, dried and calcined at 1200°C for 12 hours, and the powder is pressed into a ceramic target by hot pressing. The XRD pattern of its ceramic target material (see figure 1 ) exactly matches Y 2 o 3 PDF 41-1105 Diffraction Standard Spectrum.

[0028](2) Y made by step (1) 2 o 3 :Bi, Yb ceramic target material, using the laser pulse deposition method, using the quartz plate as the substrate, passing O with a purity of 99.999% 2 , the substrate temperature is 700°C, the target-base distance is 6cm, the working pressure is 1Pa, the laser energy is 350mJ / pulse, and the deposition time is 90min. Obtain a pure phase transparent Y 2 o 3 Thin films, the average transmittance of which exceeds 90% at 400-800nm, such as Image 6 shown. Use FLS920 fluorescence spectromete...

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Abstract

The invention discloses a near-infrared quantum cutting transparent film and a preparation method thereof and belongs to the field of solid luminescence materials. The raw materials of the film include Y2O3, Bi2O3 and Yb2O3; the mole fraction of the Bi2O3 is 0.25-1% and the mole fraction of the Yb2O3 is 0.5-5%. The preparation method comprises the following steps of: adding Bi2O3 powder and Yb2O3 powder to Y2O3 powder, ball-milling and mixing, drying and then calcinating at the temperature of 1200 DEG C for 12h and pressing into ceramic targets by using a hot pressing method; introducing oxygen by using a silicon wafer or quartz as a substrate through a laser pulse deposition method, wherein the temperature of the substrate is 400-800 DEG C, the distance between target bases is 5-8 cm, the working pressure is 0.5-10 Pa and the laser energy is 100-400 mJ / pulse. When the film is excited by the ultraviolet light, the efficient near-infrared quantum cutting down-conversion luminescence can be realized; and the heating effect of silicon solar cells is expected to be reduced and the photoelectric conversion efficiency of the cells is increased.

Description

technical field [0001] The invention belongs to the field of solid luminescent materials, and in particular relates to a rare earth-doped transparent film capable of realizing high-efficiency near-infrared quantum tailoring down-conversion luminescence and a preparation process thereof. Background technique [0002] Photovoltaic power generation of solar cells is a clean and safe renewable energy source. Due to the limitations of principles, structures, and materials, the improvement of the efficiency of solar cells with traditional structures is facing major challenges. As the most common and important semiconductor material, silicon is not only the basic material of electronic chips and integrated circuits, but also plays an absolute leading role in the photovoltaic industry. Since silicon solar cells will be dominant for a long time, it is of great significance to carry out research on improving the light utilization efficiency of silicon solar cells. However, due to the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/78C23C14/28
Inventor 王如志曲铭浩严辉张铭王波宋雪梅朱满康侯育冬刘晶冰汪浩
Owner BEIJING UNIV OF TECH
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