Supercharge Your Innovation With Domain-Expert AI Agents!

Method for self-assembling growth of GaAs nano structure in MOCVD (Metal-Organic Chemical Vapor Deposition) manner

A nanostructure and substrate technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of GaAs nanostructure methods are complex and cannot be mass-produced

Inactive Publication Date: 2012-02-08
CHANGCHUN UNIV OF SCI & TECH
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it cannot be mass-produced with the current technology
Moreover, the methods for preparing GaAs nanostructures in the past are relatively complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0006] 1. Use GaAs bulk material as the reaction source. In the vacuum reaction chamber, it is placed on the base;

[0007] 2. Pre-evacuate, heat-treat the substrate for 10 minutes, and keep the base rotating;

[0008] 3. Introduce the protective gas argon (Ar), heat the substrate at high temperature, and raise it to the required growth temperature. The substrate GaAs will be thermally decomposed, and As will become a gas and run out, and exist in the vacuum reaction chamber, on the substrate. The nanostructure Ga simple substance is left. The protective gas can prevent the Ga element from being oxidized;

[0009] 4. The As source is introduced, and the organic compound tert-butyl arsenic (TBAs) is used as the As source, and nitrogen is used as the carrier gas to transport the As element into the reaction chamber. The concentration of As gas in the reaction chamber is getting higher and higher, and when it reaches a certain value, the temperature of the system will be coole...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a GaAs nano structure by adopting an MOCVD (Metal-Organic Chemical Vapor Deposition) method. The GaAs nano structure grows on a GaAs body material substrate in a gasification manner, which belongs to a V-S (Vapor-Solid) mechanism. The method comprises the steps of: in a vacuum reaction chamber, taking a GaAs body material as a substrate, heating the substrate at high temperature, when reaching a certain temperature (700-1200 DEG C), decomposing the substrate by GaAs, and gasifying As, thereby retaining a simple-substance Ga nano structure; and introducing an organic compound tertiary butyl arsenic (TBAs) As source in the reaction chamber, wherein the thermal decomposing temperature of the TBAs is lower. The concentration of As in the vacuum reaction chamber is higher and higher, and when the concentration of the As reaches a certain value, a system is rapidly cooled to ensure that the As is re-bonded with Ga in a self-assembling manner to form the GaAs nano structure. Nitrogen (N2) is used as a carrier gas, and argon (Ar) is used as a protection gas, thus arsenic chloride is prevented from generating when As is gasified, and the simple-substance Ga is prevented from being oxidized. The method for growing the GaAs nano structure is simple in operation and brings the great convenience for volume production.

Description

technical field [0001] The invention relates to a method for preparing GaAs nanostructures, which uses MOCVD technology to self-assemble and grow GaAs nanostructures on GaAs substrates, and belongs to the technical field of semiconductor materials. Background technique [0002] The semiconductor element silicon (Si) has been widely used in the field of microelectronics and is the basis for the development of the microelectronics industry. However, Si itself has a fatal weakness, which limits its application in optoelectronic devices. [0003] GaAs of the III-V group is considered to be the second-generation semiconductor material after Si. The chemical formula of gallium arsenide is GaAs, and the band gap is 1.4 electron volts. Black-gray solid with a melting point of 1238°C. It can exist stably in the air below 600°C and is not corroded by non-oxidizing acids. The electron mobility of gallium arsenide is 6 times higher than that of silicon, and gallium arsenide has beco...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/44B82Y40/00B82Y30/00
Inventor 魏志鹏陈新影李金华方铉方芳王晓华王菲
Owner CHANGCHUN UNIV OF SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com