Boron-gallium codoped quasi-monocrystalline silicon and preparation method thereof

A technology of quasi-single-crystal silicon and single-crystal silicon, which is applied in the field of boron-gallium co-doping quasi-single-crystal silicon and its preparation, can solve the problems of reducing the light-induced attenuation of quasi-single-crystal silicon cells, and avoid the loss of boron-oxygen composites. Generate, easy to operate, good stability effect

Inactive Publication Date: 2012-04-04
东海晶澳太阳能科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it has not yet been applied in the field of quasi-single crystal silicon preparation. The method of boron-gallium in

Method used

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  • Boron-gallium codoped quasi-monocrystalline silicon and preparation method thereof
  • Boron-gallium codoped quasi-monocrystalline silicon and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0030] Example 1

[0031] The (100) growth direction of the single crystal rod is cut into a square with a cross-sectional size of 156*156mm and a height of 20mm, which is placed on the bottom of the crucible tightly and orderly. Place silicon material on the seed crystal and mix with 300g of borosilicate alloy. The mass percentage of boron in the borosilicate alloy is about 0.01%. Add 1g of metallic gallium, totaling about 430kg, and the target resistivity is 1.6Ω·cm . Put the crucible filled with silicon material into the ingot furnace, vacuum and heat, control the heater to gradually increase the temperature in the furnace to 1540℃, when the seed crystal starts to melt to the remaining thickness of about 10mm, it jumps from melting to crystal growth stage. At the initial stage of crystal growth, the temperature was quickly reduced from 1540°C to 1440°C, and then the heat shield was opened to make the silicon crystal grow upward from the seed crystal melting interface; in th...

Example Embodiment

[0033] Example 2

[0034] Take the polysilicon block with (100) as the main crystal orientation, and place multiple blocks with a height of 30mm on the bottom of the crucible tightly and orderly. Place silicon raw material on the seed crystal, mix 250g of boron alloy and 1g of metal gallium, total about 430kg, and target resistivity of 1.6Ω·cm. Put the crucible with silicon material into the ingot furnace, vacuum and heat, control the heater to gradually increase the temperature in the furnace to 1530℃, and adjust the heating rate at the bottom of the crucible to keep the temperature at the bottom of the crucible at 1300℃ to make the seed crystal Partially melted; when the seed crystal starts to melt to about 15mm thick, it jumps from the melting to the crystal growth stage. At the initial stage of crystal growth, the temperature was quickly reduced from 1530°C to 1430°C, and then the heat shield was opened to make the silicon crystals grow upward from the seed crystal melting ...

Example Embodiment

[0036] Example 3

[0037] The (100) growth direction of the single crystal rod is cut into a square with a cross-sectional size of 156*156mm and a height of 10mm, which is placed on the bottom of the crucible tightly and orderly. Place silicon raw material on the seed crystal, mix 150g of boron alloy and 4.5g of metal gallium, total about 430kg, and target resistivity of 1.7Ω·cm. Put the crucible filled with silicon material into the ingot furnace, evacuate and heat, control the heater to gradually increase the temperature in the furnace to 1550℃, and adjust the heating rate at the bottom of the crucible to keep the temperature at the bottom of the crucible at 1350℃ to make the seed crystal Partially melted, when the seed crystal begins to melt to the remaining about 5mm thick, it jumps from the melting to the crystal growth stage. At the early stage of crystal growth, the temperature was quickly reduced from 1550°C to 1450°C, and then the heat shield was opened to make silicon...

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Abstract

The invention discloses a boron-gallium codoped quasi-monocrystalline silicon, which comprises boron and/or phosphorus with the concentration of 1*10<14>/cm<3>-5*10<16>/cm<3> and gallium with the concentration of 1*10<14>-1*10<18>/cm<3>. The quasi-monocrystalline silicon can be used for manufacturing an efficient laminar solar cell, and synchronously, due to a boron-gallium codoping effect, the generation of a boron-oxygen complex is decreased or avoided, thereby decreasing the photoinduced attenuation of the cell. The invention further discloses a preparation method of the boron-gallium codoped quasi-monocrystalline silicon, and the preparation method is simple and convenient, is easy to operate, has low cost, and can be used for scale production.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to boron-gallium co-doped quasi-single crystal silicon and a preparation method thereof. Background technique [0002] The world's photovoltaic power generation industry has developed rapidly since the 1980s, with an average annual growth rate of 30%, becoming one of the fastest growing high-tech industries. Among them, crystalline silicon occupies more than 80% of the photovoltaic market due to its stable performance and mature technology. [0003] The crystalline silicon used in the manufacture of solar cells is mainly monocrystalline silicon using the Czochralski method and polycrystalline silicon using ingot technology. Czochralski monocrystalline silicon is seeded with a single crystal seed crystal with a specific crystal orientation, and it is obtained by rotating and pulling. The prepared cell has high conversion efficiency, but its single feeding is less, th...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B11/00C30B28/06
Inventor 黄新明钟根香明亮
Owner 东海晶澳太阳能科技有限公司
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