Boron-gallium codoped quasi-monocrystalline silicon and preparation method thereof
A technology of quasi-single-crystal silicon and single-crystal silicon, which is applied in the field of boron-gallium co-doping quasi-single-crystal silicon and its preparation, can solve the problems of reducing the light-induced attenuation of quasi-single-crystal silicon cells, and avoid the loss of boron-oxygen composites. Generate, easy to operate, good stability effect
Inactive Publication Date: 2012-04-04
东海晶澳太阳能科技有限公司 +1
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The invention discloses a boron-gallium codoped quasi-monocrystalline silicon, which comprises boron and/or phosphorus with the concentration of 1*10<14>/cm<3>-5*10<16>/cm<3> and gallium with the concentration of 1*10<14>-1*10<18>/cm<3>. The quasi-monocrystalline silicon can be used for manufacturing an efficient laminar solar cell, and synchronously, due to a boron-gallium codoping effect, the generation of a boron-oxygen complex is decreased or avoided, thereby decreasing the photoinduced attenuation of the cell. The invention further discloses a preparation method of the boron-gallium codoped quasi-monocrystalline silicon, and the preparation method is simple and convenient, is easy to operate, has low cost, and can be used for scale production.
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Property | Measurement | Unit |
Resistivity | 1.6 | cm·Ω |
Resistivity | 1.7 | cm·Ω |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
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