Process for manufacturing metal-insulator-metal capacitor by adopting copper damascene process, and structure

A metal capacitor and manufacturing process technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as reducing the area of ​​MIM capacitors, and achieve the effect of increasing density

Active Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF8 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] And as the semiconductor size decreases, the MIM capacitor area must be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for manufacturing metal-insulator-metal capacitor by adopting copper damascene process, and structure
  • Process for manufacturing metal-insulator-metal capacitor by adopting copper damascene process, and structure
  • Process for manufacturing metal-insulator-metal capacitor by adopting copper damascene process, and structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0046] like Figure 1a Shown in -1, the present invention provides a kind of copper damascene process metal-insulator-metal capacitor manufacturing process, wherein, make double-layer metal-insulator-metal capacitor structure and its copper damascene manufacturing process, can be fully compatible with CMOS logic circuit and inductance, and increase the capacitance density of the metal-insulator-metal capacitor, the process method includes the following steps:

[0047] Using Damascus technology, the material is silicon dioxide (SiO 2 ), silicon carbide hydroxide (SiOCH) or fluorine-doped silicon glass (Fluorinated Silicate Glass, referred to as FSG) on the base dielectric layer 102, the first layer located on the base dielectric layer is formed by photolithography. The first photoresist in the shape of the electrode groove and the substrate interc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a copper damascene process and a structure, in particular to a process for manufacturing a metal-insulator-metal capacitor by adopting a copper damascene process, and a structure. According to the structure of the metal-insulator-metal capacitor structure and the process for manufacturing the metal-insulator-metal capacitor structure by adopting the copper damascene process, the metal-insulator-metal capacitor and an inductor are simultaneously manufactured by adopting the copper damascene process; a third electrode and other structures are simultaneously manufactured; a dielectric barrier layer is removed in the manufacturing process of a second electrode and the third electrode; and a dielectric layer made of a high-dielectric-constant material is re-deposited as an intermetallic insulating layer, so that the structure of the metal-insulator-metal double-layer capacitor produced by adopting the technical scheme provided by the invention can be completely compatible with the copper damascene process of a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) logic circuit and the inductor; and the density of the metal-insulator-metal capacitor is increased.

Description

technical field [0001] The invention relates to a copper damascene process and structure, in particular to a copper damascene process metal-insulation layer-metal capacitor manufacturing process and structure. Background technique [0002] With the reduction of the feature size of semiconductor devices, the semiconductor back-end copper process replaces the aluminum process and becomes the mainstream process. In mixed-signal and RF circuits, it is necessary to develop a Metal-Insulator-Metal (MIM) capacitor structure and manufacturing process that is fully compatible with CMOS logic circuits and inductors. This not only improves the complexity of the process; but also uses low-resistance copper as the electrode plate to improve the performance of the MIM capacitor. [0003] Patent US6329234, the copper process is compatible with the structure and process flow of CMOS metal-insulator-metal capacitors, and the technical solution adopted is to make a single-layer Damascus MIM ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/92
Inventor 李磊胡有存陈玉文姬峰张亮
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap