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Chemical-mechanical polishing slurry composition comprising nonionized heat-activated nanocatalyst, and polishing method using same

一种纳米催化剂、化学机械的技术,应用在化学机械研磨浆料组合物,化学机械平坦化工序的研磨浆料组合物领域,能够解决铁离子污染、减低污染水平等问题

Active Publication Date: 2012-05-09
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even when the activator is not separated from the particles, it has multiple oxidation numbers, so there is a possibility of contamination by iron ions, etc. as an activator, and there is a problem that organic additives are required to reduce the pollution level

Method used

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  • Chemical-mechanical polishing slurry composition comprising nonionized heat-activated nanocatalyst, and polishing method using same
  • Chemical-mechanical polishing slurry composition comprising nonionized heat-activated nanocatalyst, and polishing method using same
  • Chemical-mechanical polishing slurry composition comprising nonionized heat-activated nanocatalyst, and polishing method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-5 and comparative example 1

[0040] Embodiment 1-5 and comparative example 1: according to the tungsten layer grinding speed test of different silicon dioxide content

[0041] As shown in Table 1 below, preparations containing silicon dioxide (SiO 2), hydrogen peroxide, nano-ferrosilicon as the non-ionized thermally active nano-catalyst of the present invention, and the balance is a chemical mechanical polishing slurry composition (embodiment 1-5) of deionized water. At the same time, using ferric nitrate (Fe(NO 3 ) 3 ) as a traditional catalyst instead of an unionized thermally active nanocatalyst to prepare a chemical mechanical polishing slurry composition (Comparative Example 1). The prepared slurry composition was used to grind a tungsten wafer formed with a 0.8 micron (μm) thick tungsten layer, and the grinding results are listed in Table 1. In this grinding process, a Frex-200 CMP polisher (CMP Polisher) (product of Ebara, Japan) was used as a grinding device, and IC1000 (a product of Rom & Ha...

Embodiment 6-9 and comparative example 1

[0045] Embodiment 6-9 and comparative example 1: according to the tungsten layer grinding speed test of different oxidant content

[0046] As shown in Table 2 below, preparations containing silicon dioxide (SiO 2 ), hydrogen peroxide, nano-ferrosilicon (nano-FeSi) as the non-ionized thermally active nanocatalyst of the present invention, and the chemical mechanical polishing slurry composition (embodiment 6-9) of deionized water of the remainder. At the same time, the preparation uses iron nitrate (Fe(NO 3 ) 3 ) as a traditional catalyst instead of a chemical mechanical polishing slurry composition of an unionized thermally active nanocatalyst (comparative example 2). In the same state as in Examples 1-5, these prepared slurry compositions were used for grinding, and the grinding results are shown in Table 2 below.

[0047] [Table 2]

[0048]

[0049] The iron ion content in the compositions of Comparative Examples 1 and 2 was 60 ppm. The iron content in the nano-fer...

Embodiment 10-18 and comparative example 1

[0050] Embodiment 10-18 and comparative example 1: according to the grinding speed test of different nano catalyst content

[0051] As shown in Table 3 below, preparations containing silicon dioxide (SiO 2 ), hydrogen peroxide, nano-ferrosilicon (FeSi) as the non-ionized thermally active nano-catalyst of the present invention, and the chemical mechanical polishing slurry composition (embodiment 10-18) of the balance deionized water. At the same time, the preparation uses iron nitrate (Fe(NO 3 ) 3 ) as a traditional catalyst instead of a chemical mechanical polishing slurry composition of an unionized thermally active nanocatalyst (Comparative Example 1). In the same state as in Examples 1-5, these prepared slurry compositions were used for grinding, and the grinding results are shown in Table 3 below.

[0052] [table 3]

[0053]

[0054] The iron ion content in the composition of Comparative Example 1 was 60 ppm. The iron content in the nano-ferrosilicon used in Exam...

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Abstract

The invention relates to a polishing slurry composition which comprises a nonionized heat-activated nanocatalyst, and which is useful for a chemical-mechanical planarization process, and to a polishing method using the composition. The chemical-mechanical polishing slurry composition comprises: a nonionized heat-activated nanocatalyst which discharges electrons and holes by the energy generated during a chemical-mechanical polishing process; an abrasive; and an oxidizing agent. The nonionized heat-activated nanocatalyst and the abrasive are different from each other. Preferably, the nonionized heat-activated nanocatalyst is a semiconductor substance which discharges, in an aqueous solution state, electrons and holes at a temperature of 10 to 100 DEG C.; Preferably, transition metal silicide selected from a group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi) and a mixture thereof can be used as the nonionized heat-activated nanocatalyst. More preferably, a semiconductor substance such as nanoferrosilicon can be used as the nonionized heat-activated nanocatalyst. The content of the nonionized heat-activated nanocatalyst is 0.00001 to 0.1 wt % with respect to the total slurry composition.

Description

technical field [0001] The present invention relates to a kind of chemical mechanical polishing slurry composition that is used for making semiconductor chip, more specifically, relates to a kind of polishing slurry that comprises non-ionized thermally active nano-catalyst and is especially useful for the chemical mechanical planarization process of metal layer Composition and grinding method using the same. Background technique [0002] A semiconductor chip using integrated circuit technology includes many functional components (elements) such as transistors, capacitors, and resistors, and these individual functional components are connected to each other through wiring designed in a predetermined shape to form a circuit. With updating, integrated circuits become more and more miniaturized, and thus, the functions of a chip are also gradually increased. When miniaturizing a semiconductor chip, there is a limit to easily reducing the size of elements. Therefore, in recent y...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/304
CPCC09G1/02H01L21/3212C09K3/14B24B1/00B82B3/00
Inventor 朴钟大任真爀崔正民孔铉九金宰贤朴惠贞
Owner DONGJIN SEMICHEM CO LTD