Method for fabricating an array substrate for a liquid crystal display device

Abstract

The present invention relates to a method for fabricating an array substrate for a liquid crystal display device, using an etchant composition for a copper-based metal film, wherein the etchant composition comprises, based on the total weight of the etchant composition: a) 2 to 30 wt % of hydrogen peroxide (H2O2); b) 0.1 to 5 wt % of nitric acid (HNO3); c) 0.01 to 1.0 wt % of a fluorine compound; d) 0.1 to 5 wt % of an azole compound; e) 0.1 to 8.0 wt % of an imidazole compound; and f) the remainder being water.

Description

technical field [0001] The invention relates to a method for manufacturing an array substrate for a liquid crystal display device. The present application claims the benefit of Korean Patent Application No. 10-2009-0067530 and No. 10-2009-0067531 filed on Jul. 23, 2009, which are incorporated herein by reference in their entirety. Background technique [0002] In general, forming a metal line on a substrate of a semiconductor device includes forming a metal layer using sputtering, coating a photoresist, performing exposure and development so that a photoresist is formed on a selective area, and performing etching, and prior to each individual process or follow the cleaning procedure. The etching process is performed using a photoresist as a mask to form a metal layer on selective areas, and generally includes dry etching using a plasma, or wet etching using an etchant composition. [0003] In this semiconductor device, the resistance of metal wiring has recently been regar...

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Problems solved by technology

Chromium (Cr, resistivity: 12.7×10 -8 Ωm, molybdenum (Mo, resistivity: 5×10 -8 Ωm), aluminum (Al, resistivity: 2

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