Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for fabricating an array substrate for a liquid crystal display device

A technology for liquid crystal display devices and array substrates, which is applied in optics, instruments, nonlinear optics, etc., can solve problems such as gates and data lines that are difficult to use in large TFT-LCDs, and achieve the effects of preventing electrical short circuits and simplifying etching procedures

Active Publication Date: 2012-05-23
DONGWOO FINE CHEM CO LTD
View PDF13 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chromium (Cr, resistivity: 12.7×10 -8 Ωm, molybdenum (Mo, resistivity: 5×10 -8 Ωm), aluminum (Al, resistivity: 2.65×10 -8 Ωm), and its alloys, but it is actually difficult to be used in the gate and data lines of large TFT-LCD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fabricating an array substrate for a liquid crystal display device
  • Method for fabricating an array substrate for a liquid crystal display device
  • Method for fabricating an array substrate for a liquid crystal display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 12

[0040] Embodiment 1 to 12: for the preparation of Cu-based metal layer etchant composition

[0041] Etchant compositions of Examples 1 to 12 were prepared using the ingredients shown in Table 1 below.

[0042] Table 1

[0043] h 2 o 2

[0044] * h 2 o 2 The amount of H in the etchant composition is not 2 o 2 The amount of aqueous solution, but the pure H in the etchant composition 2 o 2 amount.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method for fabricating an array substrate for a liquid crystal display device, using an etchant composition for a copper-based metal film, wherein the etchant composition comprises, based on the total weight of the etchant composition: a) 2 to 30 wt % of hydrogen peroxide (H2O2); b) 0.1 to 5 wt % of nitric acid (HNO3); c) 0.01 to 1.0 wt % of a fluorine compound; d) 0.1 to 5 wt % of an azole compound; e) 0.1 to 8.0 wt % of an imidazole compound; and f) the remainder being water.

Description

technical field [0001] The invention relates to a method for manufacturing an array substrate for a liquid crystal display device. The present application claims the benefit of Korean Patent Application No. 10-2009-0067530 and No. 10-2009-0067531 filed on Jul. 23, 2009, which are incorporated herein by reference in their entirety. Background technique [0002] In general, forming a metal line on a substrate of a semiconductor device includes forming a metal layer using sputtering, coating a photoresist, performing exposure and development so that a photoresist is formed on a selective area, and performing etching, and prior to each individual process or follow the cleaning procedure. The etching process is performed using a photoresist as a mask to form a metal layer on selective areas, and generally includes dry etching using a plasma, or wet etching using an etchant composition. [0003] In this semiconductor device, the resistance of metal wiring has recently been regar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02F1/136
CPCC23F1/18G02F2001/136295G02F1/136295
Inventor 崔容硕李石尹暎晋李铉奎李友兰
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com