Low-voltage large-current silicon-substrate thin-film solar cell and preparation method thereof
A technology of solar cells and silicon-based thin films, applied in the field of solar photoelectric conversion, can solve the problems of increasing the difficulty of the packaging process and production costs, and achieve the effect of avoiding loop dead zones and ensuring weather resistance
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Embodiment 1
[0041] See Figure 1(a), figure 2 , image 3 , Figure 4 , the present embodiment adopts high-transmittance ultra-white glass as the transparent insulating substrate 14, boron-doped zinc oxide (BZO) film as the front electrode, amorphous silicon p-i-n structure film as the photoelectric function conversion layer, aluminum-doped zinc oxide and aluminum composite The conductive film (AZO+Al) is used as the back electrode, and the entire component area is divided into three areas by four common electrodes, and the internal electrodes are connected in parallel for bus output.
[0042] Prepare as follows:
[0043] 1. see Figure 4 , select 3.2mm thick ultra-clear glass as the transparent insulating substrate 14, after ultrasonic cleaning and AOI surface particle size detection, send it into the metal organic chemical vapor deposition equipment MOCVD, use borane, diethyl zinc, deionized water and hydrogen as the reaction medium, depositing a boron-doped zinc oxide film with a thi...
Embodiment 2
[0052] See Figure 5 , using high-transmittance ultra-clear glass as the transparent insulating substrate 14, boron-doped zinc oxide (BZO) film as the front electrode, amorphous silicon p-i-n structure film as the photoelectric function conversion layer, and boron-doped zinc oxide conductive film (BZO) as the back electrode, such as Figure 5 , the entire component area is divided into five areas by six common electrodes, and the internal parallel output.
[0053] Prepare as follows:
[0054] 1. Select ultra-clear glass with a thickness of 4mm as the transparent insulating substrate 14. After ultrasonic cleaning and AOI surface particle size detection, it is sent to the metal organic chemical vapor deposition equipment MOCVD, using borane, diethyl zinc, deionized water And hydrogen is used as the reaction medium to deposit a boron-doped zinc oxide film with a thickness of 1.9 μm as the front electrode 15;
[0055] 2. The BZO coated glass is finely cleaned to remove the depo...
Embodiment 3
[0063] See Image 6 , using high-transmittance ultra-clear glass as the transparent insulating substrate 14, boron-doped zinc oxide (BZO) film as the front electrode, amorphous silicon / microcrystalline silicon stacked film as the photoelectric function conversion layer, boron-doped zinc oxide conductive film (BZO) as the back electrode, such as Image 6 The entire component area is divided into two areas by three common electrodes, and the internal parallel output.
[0064] Prepare as follows:
[0065] 1. Select ultra-clear glass with a thickness of 3.2mm as the transparent insulating substrate 14. After ultrasonic cleaning and AOI surface particle size detection, it is sent to the metal organic chemical vapor deposition equipment MOCVD, using borane, diethyl zinc, deionized Water and hydrogen are used as the reaction medium to deposit a boron-doped zinc oxide film with a thickness of 1.4 μm as the front electrode 15;
[0066] 2. The BZO coated glass is finely cleaned to re...
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