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Process control for UMG-Si material purification

A purification method and a technology for silicon ingots, which are applied in the field of silicon processing, can solve the problems of inability to concentrate impurities and maximize available silicon products, and achieve the effect of cost improvement.

Inactive Publication Date: 2012-06-13
SILICOR MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since different regions of the ingot have different impurity profiles and thus resistivity profiles, planar cuts through the ingot cannot maximize usable silicon production while removing most of the concentrated impurities

Method used

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  • Process control for UMG-Si material purification
  • Process control for UMG-Si material purification
  • Process control for UMG-Si material purification

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Embodiment Construction

[0038] The following description is not intended to be limiting, but rather serves to describe the general principles of the disclosure. The scope of the present disclosure should be determined with reference to the claims. Although the invention is described with reference to the purification of aluminum-rich UMG silicon, one skilled in the art can apply the principles discussed herein to any upgraded metallurgical grade material.

[0039] Preferred embodiments of the disclosed subject matter are shown in the drawings, and like reference numerals are used to designate like or corresponding parts in the various drawings.

[0040]Figure 1 shows a prior art process flow for reducing boron, phosphorus and aluminum content in silicon. In step 2, pure raw materials such as quartz and coal are selected to produce MG-Si with low boron content. Then, step 4 further reduces the aluminum content by MG-Si purification. In addition, the boron content can be further reduced, for example...

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Abstract

A process control method for UMG-Si purification by performing a directional solidification of molten UMG-Si to form a silicon ingot is described. The ingot is divided into bricks and the resistivity profile of each silicon brick is mapped. A crop line for removing the impurities concentrated and captured in the ingot during the directional solidification is calculated based on the resistivity map. The concentrated impurities are then removed by cropping each brick along that brick's calculated crop line.

Description

technical field [0001] The present invention relates generally to the field of silicon processing, and in particular the invention relates to the purification of upgraded metallurgical grade silicon. [0002] This application claims the benefit of Provisional Patent Application 61 / 260,391, filed November 11, 2009. Background technique [0003] The photovoltaic (PV) industry is growing rapidly, as is the amount of silicon consumed by the photovoltaic industry, in addition to more traditional integrated circuit (IC) applications. Currently, silicon demand from the solar cell industry is starting to rival that from the IC industry. With current manufacturing technologies, both the integrated circuit (IC) and solar cell industries require refined, purified silicon raw materials as raw materials. [0004] Solar cell material options range from monocrystalline, electronic-grade (EG) silicon to dirtier metallurgical-grade (MG) silicon. EG silicon enables solar cells with efficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/02
CPCC30B11/00Y02E10/52C30B35/007C30B29/06C30B11/002C01B33/037C30B11/003C30B35/00G01N27/04
Inventor K·欧纳杰拉M·瓦莱蕾西亚卡A·儒伊尼M·霍伊尔O·西德克海尔A·布洛斯F·基施特
Owner SILICOR MATERIALS INC