Planar spiral inductor with wide-narrow-alternatingly line width and space

Abstract

The invention discloses a planar spiral inductor with wide-narrow-alternatingly line width and space, which can be used for an RF integrated circuit. The planar spiral inductor adopts the structure that a spiral inductive insulation layer is arranged on a silicon substrate; the metal thin film is coated on the insulation layer to etch an inductive bottom layer metal layer, so the insulation layeris deposited on the bottom layer metal layer; through holes are formed on the insulation layer so as to connect the bottom layer metal layer and the spiral inductor layer; and the metal thin film is coated on the insulation layer to etch a spiral inductive metal layer with a multi-turn coil; and the pattern of the coil is formed through conductive metal. According to the invention, the metal coilis alternately changed in width form the outer ring to the inner ring, whereas the space is alternately changed in width form the inner ring to the outer ring, thereby reducing the Ohm wastage causedby equivalent resistors connected in series, lowering the proximity effect of the metal wires, improving the quality factor Q value of the spiral inductor, increasing the mutual induction of the wirecoils, and also improving the inductance value of the spiral inductor.

Description

technical field [0001] The invention belongs to the field of electronic technology, and further relates to a planar spiral inductor with alternating line width and spacing structure in the field of microelectronic technology. The metal line width and spacing of the invention adopts a width-narrow alternating structure, which can be used in the fields of microwave integrated circuits, filter nets, radio frequency transceiver circuits, LC oscillators, radio frequency ICs and the like. Background technique [0002] With the development of the field of radio frequency integrated circuits, the demand for high-performance planar spiral inductors is increasingly urgent. Whether spiral inductors can obtain high quality factor Q value and high inductance value has become a research hotspot in the field of microelectronics technology. [0003] At present, there are two main methods to improve the performance of planar spiral inductors: one is to optimize the structural parameters. By...

AI Technical Summary

Problems solved by technology

However, the shortcomings of this patent application are: the mutual inductance between the metal coils is reduced, resulting in a low inductance value, and the processing technology is more difficult

However, the shortcomings of this patent application are: the size of the spiral inductor is too large, which does not meet the small size and high integration design requirements of today's radio frequency integrated circuits, the metal line spacing and line width of the spiral inductor have a single change, and the Q value and inductance value are limited

However, the disadvantages of this patent application are: the mutual inductance between the spiral inductor coils is reduced, and the inductance value is low

The shortcomings of this planar spiral inductor are: the quality factor Q value is too low (the maximum Q value is only 5), and the process requirements are very high

The disadvantage of this planar spiral inductor is that the inductance value has not been significantly improved

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