CuCr alloy contact material and preparation method thereof

A contact material and alloy technology, which is applied in the direction of contacts, electrical components, electric switches, etc., can solve the problem that the powder sintering method is difficult to refine the crystal grains, and achieve the effect of saving energy and raw material consumption

Inactive Publication Date: 2012-06-27
CHINA CREC RAILWAY ELECTRIFICATION BUREAU GRP +1
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult for the powder sintering method to further refine the grains, improve the compactness and electrical conductivity, and reduce energy consumption and material consumption.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1, the preparation of CuCr alloy contact material

[0020] The magnetron co-sputtering coating method is used to deposit on the polished oxygen-free copper substrate, wherein the background vacuum degree of the sputtering is controlled to be 5×10 -5 Pa, working atmosphere The working pressure of high-purity Ar gas is 0.4Pa, the gas flow rate is 20sccm, and the speed of controlling the substrate rotation is 20 revolutions / min. The diameter of the Cu target is 75mm, and the diameter of the Cr target is 75mm. The distance between the oxygen-free copper substrates is 15cm, and the self-bias voltage is 0V; first, the sputtering power of the fixed Cu target is 180W, and a layer of pure Cu film is grown on the oxygen-free copper substrate, and the growth time is 15min to obtain the thickness 1μm pure Cu film; then maintain the sputtering power of the Cu component for continuous growth, start the growth of the Cr component, the sputtering power of the Cr target start...

Embodiment 2

[0022] Embodiment 2, the preparation of CuCr alloy contact material

[0023] The magnetron co-sputtering coating method was used to deposit on the polished oxygen-free copper substrate, wherein the background vacuum degree of sputtering was controlled to be 1×10 -5 Pa, working atmosphere The working pressure of high-purity Ar gas is 0.8Pa, the gas flow rate is 90sccm, and the speed of controlling the substrate rotation is 30 revolutions / min, the Cu target diameter is 75mm, and the Cr target diameter is 75mm. The distance between the oxygen-free copper substrates is 10cm, and the self-bias voltage is 1000V; first, the sputtering power of the fixed Cu target is kept constant at 400W, and a layer of pure Cu film is grown on the oxygen-free copper substrate, and the growth time is 10min to obtain the thickness 2μm pure Cu film; then maintain the sputtering power of the Cu component for continuous growth, start the growth of the Cr component, the sputtering power of the Cr target s...

Embodiment 3

[0025] Embodiment 3, the preparation of CuCr alloy contact material

[0026] The vacuum evaporation coating method is used for deposition on the polished oxygen-free copper substrate, and the heating method is electron beam heating, wherein the background vacuum degree of the control coating is 7×10 -8 Pa, the rotation rate of the substrate is 4 revolutions / min, and the distance between the Cu target and the Cr target and the substrate is 70cm; Cu film, the growth time is 30min to obtain a pure Cu film with a thickness of 700nm; then keep the continuous growth of the Cu component, start the growth of the Cr component, the heating power of the Cr target starts from 10W, and then increases by 5W every 12min, with the film thickness The increasing power gradually increases to 100W to obtain a CuCr alloy film a with a thickness of 5.5 μm. During the deposition process, the relative deposition rate of Cr increases from 0.01 to 0.08; then keep the heating power of Cu target 400W and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a CuCr alloy contact material and a preparation method thereof. The method comprises the following steps: (1) depositing a Cu membrane on an autorotating substrate by virtue of physical vapor deposition; (2) starting the deposition of a Cr component, keeping the relative deposition rate of the Cr component increasing in a terraced shape, and depositing a CuCr alloy membrane a on the Cu membrane, wherein the relative deposition rate of the Cr component is the ratio of the deposition rate of the Cr component to that of a Cu component, the deposition rate of the Cr component is the mass of Cr deposited on per unit area of the substrate in unit time, and the deposition rate of the Cu component is the mass of Cu deposited on per unit area of the substrate in unit time; (3) keeping the relative deposition rate of the Cr component unchanged, continuously depositing a CuCr alloy membrane b on the CuCr alloy membrane a and annealing in situ under a vacuum condition, thus obtaining the CuCr alloy contact material. According to the invention, the CuCr alloy contact material which is high in strength, high in electric conduction and high in arc erosion resistance is prepared by utilizing a physical vapor deposition method; and simultaneously, the preparation method disclosed by the invention can be used for saving energy and reducing raw material consumption.

Description

technical field [0001] The invention relates to a CuCr alloy contact material and a preparation method thereof, belonging to the technical field of metal materials. Background technique [0002] People's current life is more and more dependent on electricity, and high-voltage circuit breakers are the most important components in the power system. The circuit breaker is responsible for controlling and protecting the power system, and it must be able to operate safely and reliably. Contacts are recognized as key components of high-voltage switches such as circuit breakers, which directly affect the electrical performance of vacuum circuit breakers. Contact materials play a decisive role in the development of circuit breakers to a large extent. CuCr alloy material is a good long-life vacuum contact material. It is the most ideal contact material among all existing contact materials. It has high withstand voltage strength, excellent arc corrosion resistance, and low cut-off cu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01H11/04H01H1/025
Inventor 潘峰王光月曾飞
Owner CHINA CREC RAILWAY ELECTRIFICATION BUREAU GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap