Backboard fabricating method

A manufacturing method and backplane technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of intergranular cracking, immaturity, and insufficiently uniform grains, and achieve the effect of uniform grains
CN102534518AActive Publication Date: 2012-07-04KONFOONG MATERIALS INTERNATIONAL CO LTD

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2012-07-04

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a backboard fabricating method, comprising the following steps of: providing a backboard casting piece; forging the backboard casting piece at a temperature of 800-1000 DEG C so as to form a backboard blank; and processing the backboard blank so as to form a backboard. According to the backboard fabricating method disclosed by the invention, the backboard with a finer and more uniform inner organization structure can be obtained, so that the backboard is prevented from distortion and deformation. On one hand, a deviation between each part of a target and a silicon wafer substrate is reduced, and the quality of a coating film is improved; and on the other hand, the service life of a sputtering target assembly is prolonged.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of semiconductors, in particular to a manufacturing method of a backplane. Background technique

[0002] In the modern large-scale integrated circuit manufacturing process, magnetron sputtering has become the most excellent substrate coating process due to its advantages such as high sputtering rate, low substrate temperature rise, and good film-substrate bonding force.

[0003] In the magnetron sputtering coating process, the target assembly is composed of a target meeting the sputtering performance and a back plate combined with the target and having a certain strength. The back plate not only plays a supporting role when the target assembly is assembled to the sputtering base station, but also has the effect of conducting heat, and is used for heat dissipation of the target in the magnetron sputtering process. In the process of magnetron sputtering coating, the working environment of target components is relativel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More