Growth method and growth device for bar-shaped sapphire crystals

Abstract

The invention discloses a growth method and a growth device for bar-shaped sapphire crystals. The growth method comprises the steps as follows: in step one, quantitive high purity sapphire blocks or powder are arranged in a melting pot, and then the melting pot is put in a crystal growing furnace; an edge defined film-fed die is arranged in the melting pot, and the cross section of the guide die is circular; in step two, the crystal growing furnace is vacuumized; in step three, a primary heater controls the temperature of the crystal growing furnace to rise to 2000 to 2100 DEG C so as to melt the sapphire; in step four, seed crystals are added, and seeding is carried out; in step five, crystal growth is carried out until the crystal growth is finished, wherein, the speed ranges from 10 to 100mm / h; in step six, crystal bars are annealed; in step seven, temperature drops slowly, and the speed ranges from 10 to 60 DEG C / h; and in step eight, the crystal bars are taken out after the temperature in the furnace drops to the room temperature. The growth method and the growth device for the bar-shaped sapphire crystals can obtain the bar-shaped sapphire crystals, and can effectively improve the preparation efficiency of the sapphire crystals. The crystals that grow by adopting the growth method, and can be used as substrates for manufacturing LEDs (Light Emitting Diode) and LDs (Laser Diode) after shape processing.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a crystal growth method, in particular to a rod-shaped sapphire crystal growth method; meanwhile, the invention also relates to a rod-shaped sapphire crystal growth device. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045°C), it is often used as a material for optoelectronic components. At present, the quality of ultra-high-brightness white / blue LEDs depends on the material quality of the GaN epitaxial layer (GaN), and the quality of the GaN epitaxial layer is closely related to the surface processing qu...

AI Technical Summary

Problems solved by technology

[0007] It can be seen that the sapphire crystals prepared by the above-mentioned various methods have low processing efficiency and high wafer production costs.

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