Growth method and growth device for bar-shaped sapphire crystals

A rod-shaped sapphire and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low processing efficiency and high wafer production cost, and achieve the effect of improving production efficiency

Inactive Publication Date: 2012-07-04
上海中电振华晶体技术有限公司
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  • Description
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Problems solved by technology

[0007] It can be seen that the sapphire crystals prepared by the above-mentioned

Method used

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  • Growth method and growth device for bar-shaped sapphire crystals
  • Growth method and growth device for bar-shaped sapphire crystals
  • Growth method and growth device for bar-shaped sapphire crystals

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Embodiment 1

[0048] The present invention is a kind of growth method of sapphire rod-like crystal, selects high temperature resistance, and the material that has wettability to sapphire melt is used as guide mould, by carrying out structural design to this kind of material (as the top surface of mould has specific shape, such as round, oval, etc., use the capillary principle to guide the sapphire melt into its top surface; or use the edge of the mold to limit part of the melt) to ensure that it forms a melt film of a certain thickness or restricts a melt of a certain thickness through it film. A seed crystal with a certain crystal orientation is selected, and rod-shaped sapphire crystals are drawn from the melt film, and the drawn crystal rods meet the requirements of the LED and LD industries. The growth method of the present invention is called the TaVi method, which is an improved method based on TPS technology (Technique of Pulling from Shapers), and is a novel method for growing rod-s...

Embodiment 2

[0061] see figure 2 The difference between this embodiment and Embodiment 1 is that in this embodiment, the guide mold 3 is an annular mold with a circular or elliptical cross-section; the material of the guide mold and the sapphire melt have wettability and high temperature resistance materials or their alloys;

[0062] The difference between the growth method of the rod-shaped sapphire crystal of the present embodiment and the method described in the first embodiment is that in step three of the present embodiment, part of the sapphire melt is confined in the annular guide mold 3, and the material of the guide mold 3 and the The wettability of sapphire uses the seed crystal that sets the crystal orientation to pull the confined melt to grow rod-shaped crystals.

[0063] In summary, the rod-shaped sapphire crystal growth method and equipment proposed in the present invention can produce rod-shaped sapphire crystals, which can effectively improve the production efficiency of...

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Abstract

The invention discloses a growth method and a growth device for bar-shaped sapphire crystals. The growth method comprises the steps as follows: in step one, quantitive high purity sapphire blocks or powder are arranged in a melting pot, and then the melting pot is put in a crystal growing furnace; an edge defined film-fed die is arranged in the melting pot, and the cross section of the guide die is circular; in step two, the crystal growing furnace is vacuumized; in step three, a primary heater controls the temperature of the crystal growing furnace to rise to 2000 to 2100 DEG C so as to melt the sapphire; in step four, seed crystals are added, and seeding is carried out; in step five, crystal growth is carried out until the crystal growth is finished, wherein, the speed ranges from 10 to 100mm/h; in step six, crystal bars are annealed; in step seven, temperature drops slowly, and the speed ranges from 10 to 60 DEG C/h; and in step eight, the crystal bars are taken out after the temperature in the furnace drops to the room temperature. The growth method and the growth device for the bar-shaped sapphire crystals can obtain the bar-shaped sapphire crystals, and can effectively improve the preparation efficiency of the sapphire crystals. The crystals that grow by adopting the growth method, and can be used as substrates for manufacturing LEDs (Light Emitting Diode) and LDs (Laser Diode) after shape processing.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a crystal growth method, in particular to a rod-shaped sapphire crystal growth method; meanwhile, the invention also relates to a rod-shaped sapphire crystal growth device. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045°C), it is often used as a material for optoelectronic components. At present, the quality of ultra-high-brightness white / blue LEDs depends on the material quality of the GaN epitaxial layer (GaN), and the quality of the GaN epitaxial layer is closely related to the surface processing qu...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/20
Inventor 维塔利・塔塔琴科刘一凡牛沈军陈文渊朱枝勇李东振帕维尔・斯万诺夫
Owner 上海中电振华晶体技术有限公司
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