Na-mixing method for growing p-type ZnO single crystal film
A single crystal thin film, p-type technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low acceptor solid solubility, high electron concentration, poor repeatability and stability of p-type conduction , to achieve the effect of easy control of p-type doping concentration, ensuring crystal quality and excellent electrical properties
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Embodiment 1
[0015] Clean the a-plane sapphire substrate and put it into the molecular beam epitaxy equipment. The substrate temperature is heated to 600 °C, and the growth chamber pressure is adjusted to 1×10 -5 Torr, in radio frequency activated pure O 2 (purity 99.9999%) as O source, activated O 2 The RF power is 350 W; the metal Zn (purity 99.9998%) source is the reaction source, and the Zn source heating temperature is adjusted to 300 °C; the solid NaF powder (purity 99.995%) is the Na source, and the Na source heating temperature is adjusted to 450 °C. Na-doped p-type ZnO single crystal thin films were grown on sapphire with a growth time of 4 h and a film thickness of about 350 nm. After the growth, the film was grown at 1×10 -5 Under the oxygen pressure of Torr, the temperature was lowered at a rate of 5 °C / min, and cooled to room temperature.
[0016] The prepared Na-doped p-type ZnO single crystal thin film has excellent electrical properties at room temperature, with a resi...
Embodiment 2
[0020] Clean the ZnO bulk single crystal substrate and put it into the molecular beam epitaxy equipment. The substrate temperature is heated to 550 °C, and the growth chamber pressure is adjusted to 3×10 -5 Torr, in radio frequency activated pure O 2 (purity 99.9999%) as O source, activated O 2 The RF power was 300 W; the metal Zn (purity 99.9998%) source was used as the reaction source, and the heating temperature of the Zn source was adjusted to 285 °C; the solid NaF powder (purity 99.995%) was used as the Na source, and the heating temperature of the Na source was adjusted to 400 °C. Na-doped p-type ZnO single crystal film was grown on the single crystal, the growth time was 6 h, and the film thickness was about 450 nm. After the growth, the film was placed in a 3 × 10 -5 Under the oxygen pressure of Torr, the temperature was lowered at a rate of 3 °C / min, and cooled to room temperature.
[0021] The prepared Na-doped p-type ZnO single crystal film has excellent room t...
Embodiment 3
[0023] Clean the c-plane sapphire substrate and put it into the molecular beam epitaxy equipment. The substrate temperature is heated to 400 °C, and the growth chamber pressure is adjusted to 6×10 -5 Torr, in radio frequency activated pure O 2 (purity 99.9999%) as O source, activated O 2 The RF power is 350 W; the metal Zn (purity 99.9998%) source is the reaction source, and the heating temperature of the Zn source is adjusted to 290 °C; the solid NaF powder (purity 99.995%) is the Na source, and the Na source heating temperature is adjusted to 500 °C. Na-doped p-type ZnO single crystal films were grown on sapphire with a growth time of 2 h and a film thickness of about 160 nm. After the growth, the film was placed in a 6×10 -5 Under the oxygen pressure of Torr, the temperature was lowered at a rate of 5 °C / min, and cooled to room temperature.
[0024] The prepared Na-doped p-type ZnO single crystal film has excellent room temperature electrical properties, with a resisti...
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