Image sensor with insulated buried layer and preparation method thereof
An image sensor and insulating buried layer technology, applied in the field of semiconductors, can solve the problems of poor radiation resistance, reduce image signal-to-noise ratio and dynamic range, reduce light absorption rate, etc., to improve the ability to resist high-energy particle radiation and high light absorption efficiency. , the effect of low power consumption
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Embodiment 1
[0088] Such as Figure 3a to Figure 3f As shown, the present invention provides a kind of preparation method of the image sensor with insulating buried layer, and this preparation method at least comprises the following steps:
[0089] First perform step 1), providing a first semiconductor substrate 1 and a second semiconductor substrate 2, wherein, as Figure 3a As shown, the first semiconductor substrate 1 includes: a first supporting substrate 11, a first insulating buried layer 12 located on the surface of the first supporting substrate 11, and a first insulating buried layer 12 located on the surface of the first insulating buried layer 12. The first top semiconductor layer 13 on the top layer; the second semiconductor substrate 2 is a common semiconductor substrate or a semiconductor substrate with an insulating buried layer. In the first embodiment, as Figure 3b As shown, the second semiconductor substrate 2 is a semiconductor substrate with an insulating buried layer...
Embodiment 2
[0102] Such as Figures 4a to 4g As shown, the present invention also provides a method for preparing an image sensor with an insulating buried layer, which at least includes the following steps:
[0103] First perform step 1), providing a first semiconductor substrate 1 and a second semiconductor substrate 2, wherein, as Figure 4a As shown, the first semiconductor substrate 1 includes: a first supporting substrate 11, a first insulating buried layer 12 located on the surface of the first supporting substrate 11, and a first insulating buried layer 12 located on the surface of the first insulating buried layer 12. The first top semiconductor layer 13 on the top layer; the second semiconductor substrate 2 is a common semiconductor substrate or a semiconductor substrate with an insulating buried layer. In the second embodiment, as Figure 4b As shown, the second semiconductor substrate 2 is a common semiconductor substrate.
[0104] Wherein, the materials of the first support...
Embodiment 3
[0116] Such as Figure 5a and Figure 5b As shown, the present invention provides an image sensor with an insulating buried layer, at least comprising: a supporting substrate 11', an insulating buried layer 12', a top semiconductor layer 3', a pixel readout circuit 4', and an optical sensing device 5' , and the isolation structure 6'.
[0117] The material of the supporting substrate 11' is a common semiconductor substrate material, including at least one of silicon, germanium, silicon germanium, and sapphire.
[0118] The insulating buried layer 12' is located on the surface of the supporting substrate 11', and the insulating buried layer 12' is a single-layer structure or a stacked layer structure, wherein each layer of the single-layer structure or the stacked layer structure The material is at least one of silicon oxide, silicon nitride and silicon oxynitride.
[0119] The top semiconductor layer 3' is located on the surface of the insulating buried layer 12' and has a ...
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Abstract
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