Polymer solar cell with subwavelength anti-reflective structure and manufacturing method for polymer solar cell

A solar cell, anti-reflection technology, applied in the field of polymer solar cells, can solve the problems of easy degradation of electrical characteristics with time, no anti-reflection layer structure of polymer solar cells, etc., to improve light conversion efficiency, improve flow characteristics, improve economic effect

Inactive Publication Date: 2012-07-04
ZHEJIANG UNIV
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, most conductive polymers are sensitive to the environment, and their electrical properties are easily degraded over time under oxidation, moisture and chemical action, which makes the processing methods widely used in the field of micro-nano processing, such as chemical etching, plasma etching, LIGA technology and other methods applied to the processing of conductive polymer micro-nano structures have great limitations.
The above-mentioned problems make it difficult to efficiently and cost-effectively process micro-nano structures on conductive polymers, which is also an important reason why there is no report on the anti-reflection layer structure of polymer solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymer solar cell with subwavelength anti-reflective structure and manufacturing method for polymer solar cell
  • Polymer solar cell with subwavelength anti-reflective structure and manufacturing method for polymer solar cell
  • Polymer solar cell with subwavelength anti-reflective structure and manufacturing method for polymer solar cell

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] Such as figure 1 , Image 6 , Figure 7 Shown, a kind of preparation method of the polymer solar cell with sub-wavelength anti-reflection structure comprises the following steps:

[0044] 1) Prepare an imprint mold 8 according to the required sub-wavelength anti-reflection structure 3;

[0045] That is, an imprinting mold 8 is prepared according to the shape, spacing and number of protrusions required, and an imprinting mold 8 with a concave-convex structure opposite to the subwavelength anti-reflection structure 3 is prepared. The imprinting mold 8 can be prepared by the existing LIGA technology, LIGA It is the abbreviation of lithography, electroforming and injection molding. LIGA technology is a MEMS processing technology based on X-ray lithography technology. It is a commonly used micro-nano structure processing method. The material of the imprint mold 8 is silicon or nickel. ;

[0046] 2) Install the embossing mold 8, install the conductive polymer layer, the a...

Embodiment 1

[0051] Such as figure 1 , Image 6 , Figure 7 Shown, a kind of preparation method of the polymer solar cell with sub-wavelength anti-reflection structure comprises the following steps:

[0052] 1) According to the required sub-wavelength anti-reflection structure 3, such as figure 2 with image 3 As shown, the protrusions are cubes, the structural size is equal to 150nm×150nm×150nm, b=150nm, d=300nm, h=150nm, and the distance between the protrusions is equal to 150nm, and the subwavelength anti-reflection structure 3 is prepared as a concave-convex reverse structure. An imprinting mold 8; the imprinting mold 8 is prepared by the existing LIGA technology, and the material of the imprinting mold 8 is nickel;

[0053] 2) Install the embossing mold 8, install the conductive polymer layer, the acceptor layer 5 and the anode 6 in sequence, and the conductive polymer of the conductive polymer layer (ie, the donor layer 4) is polythiophene (the average molecular weight is 34kD, ...

Embodiment 2

[0059] Such as figure 1 , Image 6 , Figure 7 Shown, a kind of preparation method of the polymer solar cell with sub-wavelength anti-reflection structure comprises the following steps:

[0060] 1) According to the required sub-wavelength anti-reflection structure 3, such as Figure 4 As shown, the protrusions are regular quadrangular pyramids, the distance between adjacent regular quadrangular pyramids is 120nm, the side length of the square bottom of the regular quadrangular pyramids is 200nm, and the height is 150nm, that is, the structural size of the protrusions is 200nm×200nm×150nm. Structure 3: An embossing mold 8 with concave and convex opposite structures; the imprinting mold 8 is prepared by the existing LIGA technology, and the material of the imprinting mold 8 is nickel;

[0061] 2) Install the embossing mold 8, install the conductive polymer layer, acceptor layer 5 and anode 6 in sequence, and the conductive polymer of the conductive polymer layer (ie, the dono...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a polymer solar cell with a subwavelength anti-reflective structure. The polymer solar cell comprises a cover plate, a cathode, a donor layer, an acceptor layer and an anode, wherein the donor layer is a conducting polymer layer; the subwavelength anti-reflective structure is arranged on one side of the conducting polymer layer which is close to the cathode and comprises a plurality of bulges of which the structure sizes are less than or equal to 400 nanometers*400 nanometers*400 nanometers; and by the subwavelength anti-reflective structure, the reflective action of light is weakened greatly, and light beams are constrained effectively, so that the light conversion efficiency of the polymer solar cell is improved. The invention also discloses a method for preparing the polymer solar cell with the subwavelength anti-reflective structure. High rigidity among conjugated molecular chains in a conducting polymer is reduced and the flow characteristic of the conducting polymer is improved by an ultrasound field by a processing method for ultrasound composite thermal transfer print, so that the impressing quality is higher. The method is low in processing cost and efficient in processing and has a bright application prospect, and the polymer solar cell is easy to produce industrially.

Description

technical field [0001] The invention relates to the field of polymer solar cells, in particular to a polymer solar cell with a subwavelength anti-reflection structure and a manufacturing method thereof. Background technique [0002] Under the trend of increasing global energy demand, solar energy is regarded as one of the most promising renewable energy sources available. Compared with the traditional semiconductor solidified solar cells with complex structure, high cost, and large fluctuations in photovoltage due to light intensity, polymer solar cells have attracted widespread attention because of their easy processing, low toxicity, low cost, and wide selection of materials. s concern. A large number of studies have shown that among the widely developed polymer solar cells, polymer solar cells can be made into flexible and special-shaped devices due to their light weight, and the performance of devices can be easily adjusted through molecular design and synthesis of new ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/48
CPCY02E10/549Y02P70/50
Inventor 贺永傅建中章婷赵朋姚鑫骅沈洪垚陈子辰
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap