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Chemical mechanical polishing liquid for polishing alloy phase change materials

A technology of chemical mechanics and polishing fluid, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing the static corrosion rate of phase change material substrates, unsatisfactory effects, and low polishing rate, so as to inhibit GST Static corrosion, increase GST removal rate, low static corrosion effect

Active Publication Date: 2015-06-17
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned patents reduce the static corrosion rate of the phase change material substrate and reduce the scratches on the substrate surface by improving the abrasive or adding a static corrosion inhibitor, and achieved certain effects, but the effect is not satisfactory
Chinese patent CN100335581C provides a non-abrasive polishing liquid, which effectively improves the flatness of the phase change material surface, but the polishing rate is too low

Method used

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  • Chemical mechanical polishing liquid for polishing alloy phase change materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~3

[0032] Table 1 is a comparison table of the removal rate when using the chemical mechanical polishing liquid embodiment 1~3 containing the removal rate accelerator of the present invention and the chemical mechanical polishing liquid comparative example not containing the removal rate accelerator for phase change material polishing , wherein embodiments 1 to 3 include different abrasive particles, and different removal rate accelerators.

[0033] It can be seen from Table 1 that the GST polishing rate of the polishing liquid examples 1 to 3 by adding removal rate accelerators such as phosphotungstic acid, silicotungstic acid, and potassium tungstate is significantly higher than that of the polishing liquid comparison example without adding removal rate accelerators.

Embodiment 4~6

[0035] Table 2 shows the GST removal rate of Examples 4-6 of the present invention when using 2.0wt% hydrogen peroxide as the oxidizing agent and using different abrasive grains, and a comparison table with the GST removal rate of the comparative example.

[0036] From Table 2, through the comparison of the above-mentioned Examples 4-6 and the comparative examples, it can be seen that after the present invention adds a small amount of removal rate accelerator, it still has a higher GST removal rate compared with the comparative examples. And the removal rate of GST can be effectively adjusted by changing the abrasive particles or adjusting the content of additives.

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Abstract

The invention discloses a chemical mechanical polishing liquid for polishing alloy phase change materials. The polishing liquid contains water, ground particles, an oxidant and a removal rate accelerator, wherein the removal rate accelerator is one ore more kinds of soluble compounds containing tungsten. In the invention, through adding the optimized removal rate accelerator in the polishing liquid, the lower SiO2 removal rate is remained while the removal rate of GST (germanium-stibonium-tellurium) alloy is increased, and the static corrosion of the polishing liquid on the GST material is remained at a lower level.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing alloy phase change materials. Background technique [0002] Phase change material (Phase Change Material, PCM) is a material that can change its physical state (such as crystalline state, electrical conductivity) in response to external physical effects (such as light, electricity, heat) applied to it. It is widely used in information storage devices such as optical discs. The newly developed technology integrates phase-change materials into integrated circuit devices to make storage devices that can be highly scaled, three-dimensionally stacked, and have fast response capabilities, also known as "Phase-change Random Access Memory" (Phase-change Random Access Memory). Access Memory, PRAM), among which the most valuable phase change material is germanium-antimony-tellurium (GST) alloy, such as the chemical formula Ge 2 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
Inventor 庞可亮
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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