Growth method and equipment of sapphire crystal

A technology of sapphire crystal and growth method, which is applied in the field of crystal growth, can solve the problems of low processing efficiency and high wafer production cost, and achieve the effect of improving production efficiency

Inactive Publication Date: 2012-07-11
上海中电振华晶体技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] It can be seen that the sapphire crystals prepared by the above-mentioned

Method used

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  • Growth method and equipment of sapphire crystal
  • Growth method and equipment of sapphire crystal
  • Growth method and equipment of sapphire crystal

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Experimental program
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Effect test

Embodiment 1

[0048] The present invention is a kind of growth method of sapphire rod-like crystal, selects high temperature resistance, and the material that has wettability to sapphire melt is used as guide mould, by carrying out structural design to this kind of material (as the top surface of mould has specific Shapes, such as square, rectangular, etc., use the capillary principle to guide the sapphire melt into its top surface; or use the edge of the mold to limit part of the melt) to ensure that it forms a melt film of a certain thickness or restricts a melt film of a certain thickness through it. A seed crystal with a certain crystal orientation is selected, and rod-shaped sapphire crystals are drawn from the melt film, and the drawn crystal rods meet the requirements of the LED and LD industries. The growth method of the present invention is called the TaVi method, which is an improved method based on TPS technology (Technique of Pulling from Shapers), and is a novel method for growi...

Embodiment 2

[0061] see figure 2 The difference between this embodiment and Embodiment 1 is that in this embodiment, the guide mold 3 is an annular mold with a square or rectangular cross-section; the material of the guide mold and the sapphire melt have a high-temperature-resistant material with wettability or its alloy material;

[0062] The difference between the growth method of the sapphire crystal of the present embodiment and the method described in the first embodiment is that in the third step of the present embodiment, part of the sapphire melt is confined in the annular guide mold 3, and the material of the guide mold 3 and the sapphire Wettability, the confined melt is pulled by the seed crystal with set crystal orientation, so as to grow rod-shaped crystals.

[0063] In summary, the sapphire crystal growth method and equipment proposed in the present invention can produce rod-shaped sapphire crystals, which can effectively improve the production efficiency of sapphire crysta...

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Abstract

The invention discloses a growth method and equipment of a sapphire crystal. The growth method comprises the following steps of: step S1, placing a high purity sapphire lump material or powder material of a set weight into a crucible, and then placing the crucible into a crystal growth furnace, wherein a guide die is arranged in the crucible; step S2, vacuumizing the crystal growth furnace; step S3, controlling the temperature rise of the crystal growth furnace to 2,000-2,100 DEG C through a main heater until sapphire is smelted into a fusant; step S4, discharging a seed crystal, and carrying out seeding; step S5, growing the crystal at the speed of 10-100 mm/h until the crystal growth ends; step S6, carrying out annealing treatment on a crystal bar, wherein the annealing temperature is 1,600-2,000 DEG C, and the annealing time is for 10-20 hr; step S7, slowly cooling at the speed of 10-60 DEG C per h; and step S8, cooling the temperature in the furnace to room temperature, and taking out the crystal bar. According to the growth method and equipment of the sapphire crystal provided by the invention, a bar-shaped sapphire crystal can be prepared, and the utilization rate of the sapphire crystal is effectively improved. The crystal which grows by using the method is subjected to forming and processing and can be used, as a substrate, for manufacturing LED (Light Emitting Diode) and LD (Laser Diode) devices.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a crystal growth method, in particular to a sapphire crystal growth method; meanwhile, the invention also relates to a sapphire crystal growth device. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045°C), it is often used as a material for optoelectronic components. At present, the quality of ultra-high-brightness white / blue LEDs depends on the material quality of the GaN epitaxial layer (GaN), and the quality of the GaN epitaxial layer is closely related to the surface processing quality of the sapphire ...

Claims

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Application Information

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IPC IPC(8): C30B15/24C30B29/20
Inventor 维塔利・塔塔琴科刘一凡牛沈军陈文渊朱枝勇李东振帕维尔・斯万诺夫
Owner 上海中电振华晶体技术有限公司
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