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Thick film photoresist cleaning solution

A technology of cleaning solution and photoresist, which is applied in the processing of photosensitive materials, etc., can solve the problems of insufficient cleaning ability, strong corrosion of semiconductor wafer patterns and substrates, etc., and achieve the effect of reducing corrosion

Active Publication Date: 2012-07-11
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for cleaning thick-film photoresist in view of the insufficient cleaning ability of existing thick-film photoresist cleaning solutions or the defects of strong corrosion to semiconductor wafer patterns and substrates. Highly capable photoresist cleaner with low corrosiveness to semiconductor wafer patterns and substrates

Method used

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  • Thick film photoresist cleaning solution
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  • Thick film photoresist cleaning solution

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Embodiment Construction

[0020] The present invention will be further described below through specific embodiments.

[0021] Component and content of cleaning agent in each embodiment (Examples) of table 1

[0022]

[0023]

[0024] In order to further investigate the cleaning situation of this type of cleaning solution, the present invention adopts the following technical means: the semiconductor wafer (bump package wafer) that will contain negative acrylic photoresist (thickness is about 120 microns) is immersed in the cleaning agent , at 25-90°C, use a constant temperature oscillator to vibrate at a vibration frequency of about 60 rpm for 15-120 minutes, then wash with deionized water and blow dry with high-purity nitrogen. The cleaning effect of the photoresist and the corrosion situation of the wafer by the cleaning solution are shown in Table 2.

[0025] Table 2 embodiment to wafer cleaning situation

[0026]

[0027] Corrosion:

◎Basically no corrosion;

Cleaning sit...

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Abstract

The invention discloses a low-etching cleaning solution suitable for cleaning relatively thick photoresist. The low-etching photoresist cleaning solution contains potassium hydroxide, solvent, alkylol amine, organic phenol, benzoic acid and derivative thereof or salt thereof, and polycarboxylate corrosion inhibitor. The photoresist cleaning solution can be used for removing the photoresist or other residues on metal, metal alloy or dielectric substrate, has relatively low etching rate on the metals such as copper, aluminum, tin, lead and silver, and has good application prospect in the micro-electronics field such as semiconductor chip cleaning.

Description

technical field [0001] The invention relates to a photoresist cleaning agent, in particular to a thicker photoresist cleaning agent (thickness greater than 100 microns). Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of silicon dioxide, Cu (copper) and other metals and low-k materials, and the pattern is transferred after exposure. After the required circuit pattern is obtained, the Before the next process, the residual photoresist needs to be stripped off. For example, in the wafer microsphere implantation process (bumping technology), photoresist is required to form a mask, and the mask also needs to be removed after microspheres are successfully implanted, but because the photoresist is relatively thick, it is often difficult to completely remove it. more difficult. The more common methods to improve the removal effect are to extend the soaking time, increase the soaking temperature and use mor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 刘兵彭洪修孙广胜
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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