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Laser diode assembly and semiconductor optical amplifier assembly

A technology of laser diodes and optical amplifiers, which is applied in the structure of semiconductor amplifiers, semiconductor lasers, and optical waveguide semiconductors, and can solve problems such as hindering the spread of laser technology and expensive solid-state laser light sources

Active Publication Date: 2012-07-11
SONY CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, titanium / sapphire lasers are expensive larger solid-state laser sources, which is the main factor hindering the spread of laser technology

Method used

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  • Laser diode assembly and semiconductor optical amplifier assembly
  • Laser diode assembly and semiconductor optical amplifier assembly
  • Laser diode assembly and semiconductor optical amplifier assembly

Examples

Experimental program
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Effect test

Embodiment 1

[0048] 2. Example 1 (laser diode assembly according to the embodiment of the present invention)

Embodiment 2

[0049] 3. Embodiment 2 (modified example of embodiment 1)

[0050] 4. Embodiment 3 (another modified example of Embodiment 1)

Embodiment 4

[0051] 5. Example 4 (semiconductor optical amplifier module according to the first embodiment of the present invention)

[0052] 6. Embodiment 5 (modified example of embodiment 4)

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Abstract

The invention discloses a laser diode assembly and semiconductor optical amplifier assembly. The laser diode assembly includes a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation, an external resonator, and a wavelength selective element (82,92,94-97). A long wavelength component of a pulsed laser beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective element, and output to the outside.

Description

technical field [0001] The present invention relates to laser diode assemblies and semiconductor optical amplifier assemblies. Background technique [0002] Today, ultrashort-pulse ultrahigh-power lasers are actively used for research in cutting-edge scientific fields using laser beams with pulse times of attoseconds or femtoseconds. Ultrashort-wave pulse lasers are actively studied from scientific interest in explaining ultrahigh-speed phenomena in picoseconds or femtoseconds, and further, practical applications of ultrashort-wave pulse lasers such as microfabrication or two-photon imaging using high peak power are actively studied. A high-power ultrashort-pulse laser diode device including a GaN-based compound semiconductor having an emission wavelength band of 405 nm is expected as a light source for a volumetric optical disk expected in a next-generation optical disk system after the Blu-ray optical disk system, in the medical field or in biological Light sources requir...

Claims

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Application Information

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IPC IPC(8): H01S5/065H01S5/14H01S5/068
CPCH01S5/0425H01S5/2009H01S5/101H01S5/06251H01S5/0657H01S5/16H01S5/0071H01S5/34333H01S5/22H01S5/50H01S5/028H01S5/3211H01S5/0064H01S5/309H01S5/0078H01S5/3216H01S5/141H01S5/1014H01S2301/176H01S5/3063H01S5/1085B82Y20/00H01S5/04252H01S5/04256
Inventor 横山弘之河野俊介仓本大
Owner SONY CORP
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