PN solar cell with transverse structure and manufacturing method for solar cell
A solar cell and lateral structure technology, applied in the field of solar cells, can solve problems such as hindering cell conversion efficiency and low spectral response of monocrystalline silicon cells, and achieve the effects of reducing material cost, reducing purity requirements, and improving collection probability
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Embodiment 1
[0040] 1) After standard cleaning of the n-type single crystal silicon substrate, a layer of SiO is thermally grown on all surfaces of the sample 2 as a cover layer.
[0041] 2) Use photolithography to carve a strip pattern on the upper surface of the sample to remove the SiO in the pattern 2 layer, and then use etching techniques to remove the SiO 2 Grooves were carved in the area of the layer, the depth of the grooves was 300 μm, the width of the grooves was 15 μm, and the pitch of the grooves was 200 μm, and then the photoresist was removed.
[0042] 3) The sample is subjected to p-type diffusion (boron expansion), the diffusion depth is 0.3 μm, and then the SiO on all surfaces of the sample is removed 2 layer. In this way, the lateral p-n junction is formed.
[0043] 4) After the groove pattern is carved on the upper surface of the sample by photolithography technology, metal aluminum is deposited in the groove as the upper electrode, and then peeled off.
[0044] 5...
Embodiment 2
[0047] 1) After the standard cleaning of the n-type single crystal silicon substrate, use photolithography technology to carve strip patterns on the substrate, and then use etching technology to carve grooves on the substrate. The depth of the groove is 300 μm. The groove width is 15 μm, the groove pitch is 200 μm, and then the photoresist is removed.
[0048] 2) After performing standard cleaning on the grooved substrate, put it into the cavity of the epitaxial growth equipment to grow a p-type silicon layer with a thickness of 0.5 μm, and the growth is completed.
[0049] 3) The reverse pattern of the groove is carved by photolithography technology, and then the p-type silicon layer grown outside the substrate groove is removed by etching technology, and then the photoresist is removed. In this way, the lateral p-n junction is formed.
[0050] 4) After the pattern of the upper electrode is engraved on the upper surface of the sample by photolithography technology, metal alu...
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