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PN solar cell with transverse structure and manufacturing method for solar cell

A solar cell and lateral structure technology, applied in the field of solar cells, can solve problems such as hindering cell conversion efficiency and low spectral response of monocrystalline silicon cells, and achieve the effects of reducing material cost, reducing purity requirements, and improving collection probability

Inactive Publication Date: 2014-09-03
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the current monocrystalline silicon cell with this commonly used structure has a small spectral response in the short-wave band, which hinders the further improvement of cell conversion efficiency.

Method used

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  • PN solar cell with transverse structure and manufacturing method for solar cell
  • PN solar cell with transverse structure and manufacturing method for solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1) After standard cleaning of the n-type single crystal silicon substrate, a layer of SiO is thermally grown on all surfaces of the sample 2 as a cover layer.

[0041] 2) Use photolithography to carve a strip pattern on the upper surface of the sample to remove the SiO in the pattern 2 layer, and then use etching techniques to remove the SiO 2 Grooves were carved in the area of ​​the layer, the depth of the grooves was 300 μm, the width of the grooves was 15 μm, and the pitch of the grooves was 200 μm, and then the photoresist was removed.

[0042] 3) The sample is subjected to p-type diffusion (boron expansion), the diffusion depth is 0.3 μm, and then the SiO on all surfaces of the sample is removed 2 layer. In this way, the lateral p-n junction is formed.

[0043] 4) After the groove pattern is carved on the upper surface of the sample by photolithography technology, metal aluminum is deposited in the groove as the upper electrode, and then peeled off.

[0044] 5...

Embodiment 2

[0047] 1) After the standard cleaning of the n-type single crystal silicon substrate, use photolithography technology to carve strip patterns on the substrate, and then use etching technology to carve grooves on the substrate. The depth of the groove is 300 μm. The groove width is 15 μm, the groove pitch is 200 μm, and then the photoresist is removed.

[0048] 2) After performing standard cleaning on the grooved substrate, put it into the cavity of the epitaxial growth equipment to grow a p-type silicon layer with a thickness of 0.5 μm, and the growth is completed.

[0049] 3) The reverse pattern of the groove is carved by photolithography technology, and then the p-type silicon layer grown outside the substrate groove is removed by etching technology, and then the photoresist is removed. In this way, the lateral p-n junction is formed.

[0050] 4) After the pattern of the upper electrode is engraved on the upper surface of the sample by photolithography technology, metal alu...

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Abstract

The invention discloses a PN solar cell with a transverse structure and a manufacturing method for the solar cell, and relates to a solar cell. The PN solar cell with the transverse structure comprises a substrate, wherein a groove is formed on the substrate; a semiconductor layer is formed in the groove through diffusion, epitaxy and the like; electrodes and an anti-reflection coating are evaporated on the semiconductor layer respectively; and a back electrode is evaporated at the bottom of the semiconductor layer. When the substrate is a p-type semiconductor layer, the semiconductor layer is an n-type semiconductor layer; when the substrate is the n-type semiconductor layer, the semiconductor layer is the p-type semiconductor layer. By adopting a transverse p-n junction parallel to a surface, namely a structure where a built-in electric field is parallel to the surface, photon-generated carriers only do drift motion in the transverse structure and do not need to do diffusion motion. On the premise that full light absorption in a space charge region is guaranteed, the drift distance of the photon-generated carriers can be greatly shortened due to the transverse structure, the requirement of the cells on the purity of silicon materials is greatly reduced, and the material cost of silicon solar cells can be dramatically reduced.

Description

technical field [0001] The invention relates to a solar cell, in particular to a PN solar cell with a lateral structure and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible renewable and clean energy source. The energy that the sun shines on the earth for one hour is equivalent to the world's total energy consumption for one year. The effective use of solar energy has become the consensus of mankind. As one of the important means of solar energy utilization, the research and development of solar cells, namely photovoltaic power generation, has become increasingly important. At present, solar cells are mainly based on silicon-based solar cells, and more than 89% of the photovoltaic market is occupied by silicon-based solar cells. The research and development of silicon-based solar cells has been widely valued. Among the silicon series solar cells, the monocrystalline silicon solar cells have the highest conversion efficiency and th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0216H01L31/0224H01L31/18
CPCY02P70/50
Inventor 刘宝林张玲朱丽虹
Owner XIAMEN UNIV
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