Preparation method of silicon chip metallographic specimen

Abstract

The invention discloses a preparation method of a silicon chip metallographic specimen. The preparation method comprises the following steps: (1) proportioning and mixing acrylic resin powder and a liquid curing agent uniformly according to instructions, adding an organic solvent with the weight of 5-25% of the total weight of the acrylic resin powder and the liquid curing agent, and mixing uniformly to prepare a cold inserted agent; (2) placing a silicon chip on the bottom of a silicon gel cold inserted mold, pouring the cold inserted agent prepared in the step (1), and curing; and (3) carrying out polishing and corrosion treatment on the cured metallographic specimen, wherein the organic solvent is ethanol, glycol or isopropanol. The preparation method of the silicon chip metallographic specimen disclosed by the invention has the advantages that the metallographic specimen of the ultra-thin and fragile silicon chip can be prepared, structure morphologies such as dislocation with clear materials are obtained, the phenomena of wrapping, crashing and the like of the ultra-thin silicon chip in specimen insertion and polishing processes are avoided, the problem that the micro scratch of the ultra-thin silicon chip is difficult to remove is solved, and the metallographic specimen of the ultra-thin silicon chip is prepared successfully.

Description

technical field [0001] The invention belongs to the technical field of metallographic sample preparation, specifically relates to the field of semiconductor and solar photovoltaic production technology and research, and in particular to a method for preparing metallographic samples of silicon wafers, which is mainly used for preparing metallographic samples of ultra-thin silicon wafers. It is suitable for the observation of microstructures such as dislocations and grain boundaries of ultra-thin silicon wafers. Background technique [0002] The thickness of solar-grade silicon wafers is generally less than 250 μm. In the process of preparing samples for metallographic observation and scanning electron microscope observation, because the silicon wafers are thin and brittle, the heating and pressing process of the thermal mounting method may easily cause the silicon wafers to break. , cannot meet the requirements, and the cold mounting method has the advantage of not requiring ...

AI Technical Summary

Problems solved by technology

Acrylic resin cold mounting agent has the advantage of fast solidification speed, generally it can be solidified within 0.5h at room temperature, but it has the problems of large shrinkage stress and high heat release, which will cause a large amount of heat generated inside the thin silicon wafer during the sample preparation process. The stress will cause the sample to warp and break during the subsequent grinding and polishing process, and the polishing process cannot be completed; the epoxy resin cold mounting agent has the advantages of small shrinkage and small stress, and the prepared sample has better results , but the solidification speed is slow, generally takes more than 12 hours, the efficiency is low, and it cannot meet the needs of a large number of rapid sample preparation

Images