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Method for growing gem crystals by way of vacuum induction heating and device realizing method

A technology of vacuum induction and crystal growth, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low quality, small temperature gradient, increased energy consumption, etc., to improve crystal quality, reduce heat conduction, save energy cost effect

Active Publication Date: 2012-08-08
江苏浩瀚蓝宝石科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional Kyropoulos heating and heat preservation system is made of tungsten-molybdenum materials, which are easily deformed at high temperatures. After repeated use, the temperature field will be asymmetrical, which is not conducive to the growth of sapphire.
Chinese invention patent 200510010116.4 discloses a "cold-heart-shoulder micro-pulling method for large-size sapphire single crystals". Crystallization, shouldering, equal-diameter pulling, cooling and annealing process, but the temperature gradient in the process of this method is very small, the process control is very difficult, requires a high quality of personnel, and the degree of automation is difficult to improve
In addition, Chinese patent 200910053206.X relates to a "method for growing crystals by kyropoulos in a reducing atmosphere". This method is due to the carbon contained in the insulation material, which reacts with a small amount of oxygen in the system at a high temperature to form carbon monoxide to provide a reducing atmosphere and fill the Injecting high-purity N2 or Ar as a protective gas, because the Kyropoulos crystal growth cycle is very long, it will increase energy consumption, thereby increasing the cost of crystal growth, and at the same time, using the Kyropoulos method to grow crystals under non-vacuum conditions will easily lead to Bubbles wrapped in the crystal, the quality is not high
[0005] Yet above-mentioned method has only solved the problems such as sapphire crystal growth gas environment, induction tungsten-molybdenum heater, tungsten-molybdenum reflective screen insulation in sapphire crystal growth process
The existing sapphire crystal growth method is not equipped with a tungsten, molybdenum or tungsten-molybdenum alloy crucible temperature adjustment device, nor can it adjust the cooling rate during and after the crystal growth process, and cannot save energy and reduce emissions.
Therefore, the existing technology for growing sapphire crystals cannot solve the following problems at the present stage: the temperature gradient of the tungsten, molybdenum or tungsten-molybdenum alloy crucible is small, it is difficult to control the process of crystal growth heating and cooling, the degree of automation cannot be improved, and the energy consumption is huge Wait

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  • Method for growing gem crystals by way of vacuum induction heating and device realizing method
  • Method for growing gem crystals by way of vacuum induction heating and device realizing method

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Embodiment 1

[0020] Embodiment 1: Adopt the method described in the present invention to grow Φ100 sapphire crystal

[0021] Aluminum oxide raw material is packed in tungsten, molybdenum or tungsten-molybdenum alloy crucible 13, and press figure 1 The induction heating furnace is installed as shown, in the figure: 1—observation position of human eyes, 2—observation window, 3—seed crystal rod, 4—graphite felt, 5—seed crystal, 6—zirconia barrel, 7—induction tungsten, Molybdenum or tungsten-molybdenum alloy heating body, 8—zirconia support, 9—zirconia insulation cover, 10—crystal, 11—induction coil, 12—melt, 13—tungsten, molybdenum or tungsten-molybdenum alloy crucible, 14—furnace body . Vacuum to a vacuum degree higher than 6×10 -3 Pa, and then start to heat up to melt the raw materials. The direction of the seed crystal is a direction. The traditional Kyropoulos crystal growth process is adopted, and the material surface is observed through the observation window 2. According to the growt...

Embodiment 2

[0022] Embodiment 2: Adopt the method described in the present invention to grow Φ 150 sapphire crystals

[0023] Put the alumina raw material into the tungsten crucible, and press figure 1 The induction heating furnace is installed as shown, in the figure: 1—human eye observation position, 2—observation window, 3—lifting rod, 4—graphite felt, 5—seed crystal, 6—zirconia barrel, 7—tungsten heating body, 8—zirconia holder, 9—zirconia insulation cover, 10—crystal, 11—induction coil, 12—melt, 13—tungsten crucible, 14—furnace body. Vacuum to a vacuum degree higher than 6×10 -3 After Pa, start to heat up to melt the raw material. The direction of the seed crystal is in the c direction. Observe the material surface through the observation window 2. According to the growth rate of the seed crystal, when the seed crystal contacts the liquid surface 5-10 minutes, the seed crystal grows 1-2mm around. Set the seed temperature at a suitable temperature, and then grow crystals at a coolin...

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Abstract

The invention provides a method for growing gem crystals by way of vacuum induction heating and a device realizing the method. The method includes the following steps: an inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body is utilized to heat alumina material in a crucible until the alumina material is melted, the convection of the melt and the linear velocity of flow are observed, an appropriate seeding temperature is chosen by adjusting the relative positional relation between the inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body and the crucible,and after seeding, crystallization, equal-diameter growth and separation between crystals and the crucible, crystal growth is finished. An adjustable gap exists between the inductive tungsten, molybdenum or tungsten-molybdenum alloy heating body (7) and the tungsten, molybdenum or tungsten-molybdenum alloy crucible of the device (13), so that the relative positional relation between the inductivetungsten, molybdenum or tungsten-molybdenum alloy heating body (7) and the tungsten, molybdenum or tungsten-molybdenum alloy crucible of the device (13) can be adjusted. The method and the device canbe adopted to produce large-dimension sapphires, the process can be conveniently and automatically controlled, energy consumption is reduced, and the cost is saved.

Description

technical field [0001] The invention relates to a method for growing sapphire crystals by vacuum induction heating, which includes heating the raw materials of alumina in a crucible until melting by induction of tungsten, molybdenum or a tungsten-molybdenum alloy heating body on the basis of the induction heating pulling method for growing crystals Finally, observe the convection of the melt and the linear velocity of the liquid flow, and select the appropriate seeding temperature by adjusting the relative position relationship between the tungsten, molybdenum or tungsten-molybdenum alloy heating body and the crucible. Disengaged from the process, crystal growth is complete. [0002] The invention also relates to a vacuum induction heating equipment for growing sapphire crystals, which includes graphite felt as an insulating layer, a tungsten, molybdenum or tungsten-molybdenum alloy crucible, and an induction tungsten, molybdenum or tungsten-molybdenum alloy heating body, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B15/14
Inventor 何晓明郭余庆胡晖吴成荣郭宏鹤胡森施吉祥
Owner 江苏浩瀚蓝宝石科技有限公司
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