Pressure sensor chip based on ZnO nanoline array, and manufacturing method of pressure sensor chip

A technology of nanowire arrays and pressure sensors, applied in nanotechnology for sensing, fluid pressure measurement by changing ohmic resistance, nanotechnology, etc., can solve problems such as poor DC response

Inactive Publication Date: 2012-08-22
XI AN JIAOTONG UNIV
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Problems solved by technology

The disadvantage is that it can only test dynamic pressure, generally can not test static pressure, and the output DC response is poor, it is necessary to use a high input impedance circuit to overcome this defect, in addition, the piezoelectric material also needs to be moisture-proof and isolated

Method used

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  • Pressure sensor chip based on ZnO nanoline array, and manufacturing method of pressure sensor chip
  • Pressure sensor chip based on ZnO nanoline array, and manufacturing method of pressure sensor chip
  • Pressure sensor chip based on ZnO nanoline array, and manufacturing method of pressure sensor chip

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Embodiment Construction

[0060] The pressure sensor chip based on the ZnO nanowire array of the present invention and its preparation method are described in detail below in conjunction with the accompanying drawings:

[0061] see figure 1 As shown, the pressure sensor chip based on ZnO nanowires of the present invention includes a C-cup elastic element composed of a silicon base 1, an effective silicon film 2, a platinum electrode 3 and an upper through-hole electrode 4; wherein the silicon base 1 is made of SOI The upper layer of single crystal silicon 11 of the silicon wafer is etched; the effective silicon film 2 is composed of a silicon dioxide buried layer 12 of the SOI silicon wafer and a lower layer of single crystal silicon 13, and the lower layer of single crystal silicon 13 is located below the silicon dioxide buried layer 12; The electrode 3 is located inside the C-shaped cup, on the lower surface of the effective silicon film 2; the upper through-hole electrode 4 is connected to the plat...

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Abstract

The invention provides a pressure sensor chip based on a ZnO nanoline array and a manufacturing method of the pressure sensor chip. The ZnO nanoline is adopted as a piezoelectric element of a pressure sensor for the chip; the mechanical energy is converted into electric signals by using the piezoelectric effect of the ZnO so as to achieve the purpose of pressure detection; as the ZnO nanoline is used as the piezoelectric element, compared with ordinary piezoelectric elements, the process from accumulation to release can be realized by using the piezoelectric effect of the ZnO nanoline and the Schottky contact of semiconductors and metals, so that high impedance output amplifying circuits desired by the ordinary piezoelectric elements are unnecessary; in addition, the piezoelectric pressure sensor can be further minimized by synchronizing a nano-scale structure of high quality.

Description

technical field [0001] The invention relates to a pressure sensor chip based on Micro Electro Mechanical Systems (MEMS) technology and a preparation method thereof, in particular to a pressure sensor chip based on a ZnO nanowire array and a preparation method thereof. Background technique [0002] With the continuous advancement of sensor technology and MEMS technology, the development of pressure measurement technology has been strongly promoted, and some new methods of pressure measurement based on MEMS technology have emerged. Piezoelectric pressure sensor is one of many measurement methods. The sensor based on piezoelectric effect is a self-generating and electromechanical conversion sensor, and its sensitive element is made of piezoelectric material. After the piezoelectric material is stressed, charges are generated on the surface, and a voltage signal proportional to the external force is output after being amplified by the charge amplifier, impedance transformation a...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L9/06B81C3/00B82Y15/00
Inventor 蒋庄德许煜赵立波赵玉龙
Owner XI AN JIAOTONG UNIV
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