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Trimethyl gallium purification system and purification method

A technology of trimethylgallium and purification method, which is applied in the field of purification of metal-organic compounds, to achieve the effects of improving purification efficiency, ensuring safe operation, and simple equipment and processes

Inactive Publication Date: 2012-09-12
清远先导材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the industry has done some research on the purification technology of trimethylgallium, there is still a long way to go in large-scale production, so it is necessary to improve the purification system and purification method

Method used

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  • Trimethyl gallium purification system and purification method
  • Trimethyl gallium purification system and purification method
  • Trimethyl gallium purification system and purification method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Through the inert gas supply device 7 using nitrogen and the rotary vane vacuum pump 8 pairs figure 1 The purification system shown (the raw material kettle 1 is a stainless steel batch kettle, the tower column 2 includes four tower sections 21, the condenser 3 uses water as the refrigerant, the cold trap 4 uses water as the refrigerant, and the fraction tank 6 includes The front distillate tank, the middle distillate tank and the rear distillate tank of the earthen tank, and the vacuum buffer tank 9) The whole system has been vacuumed to 10 -1 Pa is then replaced with nitrogen; the 30L trimethylgallium crude product is transferred to the raw material kettle 1 through an inert system using nitrogen, and the column top temperature of the column 2 is controlled at 50 ° C, and the distillation is carried out at atmospheric pressure, and the reflux ratio is 30:1. Middle distillate tank 61B obtains purified trimethylgallium.

Embodiment 2

[0055] Through the inert gas supply device 7 using nitrogen and the rotary vane vacuum pump 8 pairs figure 1 The purification system shown (the raw material kettle 1 is a stainless steel batch kettle, the tower column 2 includes four tower sections 21, the condenser 3 uses water as the refrigerant, the cold trap 4 uses water as the refrigerant, and the fraction tank 6 includes The front distillate tank, the middle distillate tank and the rear distillate tank of the earthen tank, and the vacuum buffer tank 9)) The whole system has been vacuumed to 10 -2 Pa is then replaced with nitrogen; the 30L trimethylgallium crude product is transferred to the raw material kettle 1 through an inert system using nitrogen, and the column top temperature of the column 2 is controlled at 60 ° C, and the distillation is carried out at atmospheric pressure, and the reflux ratio is 40:1. Middle distillate tank 61B obtains purified trimethylgallium.

Embodiment 3

[0057] Through the inert gas supply device 7 using nitrogen and the rotary vane vacuum pump 8 pairs figure 1 The purification system shown (the raw material kettle 1 is a stainless steel batch kettle, the tower column 2 includes four tower sections 21, the condenser 3 uses water as the refrigerant, the cold trap 4 uses water as the refrigerant, and the fraction tank 6 includes The front distillate tank, the middle distillate tank and the rear distillate tank of the earthen tank, and the vacuum buffer tank 9)) The whole system has been vacuumed to 10 -3 Pa is then replaced with nitrogen; the 30L trimethylgallium crude product is transferred to the raw material kettle 1 through an inert system using nitrogen, and the column top temperature of the column 2 is controlled at 70 ° C, and the distillation is carried out at atmospheric pressure, and the reflux ratio is 50:1. Middle distillate tank 61B obtains purified trimethylgallium.

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Abstract

The invention provides a trimethyl gallium purification system and purification method. The trimethyl gallium purification system comprises a raw material kettle, a tower column, a condenser, a reflux controller, a fraction tank and an inert gas feeding device, wherein the raw material kettle carries out atmospheric distillation on trimethyl gallium coarse products fed thereinto to obtain trimethyl gallium vapor and a kettle liquid; the tower column is controlled to be communicated with the raw material kettle and rectify the trimethyl gallium vapor fed by the raw material kettle; the condenser is controlled to be communicated with the tower column, receive the rectified trimethyl gallium vapor discharged from the tower column and condense the rectified trimethyl gallium vapor; the reflux controller is controlled to be communicated with the condenser and receive the trimethyl gallium condensate discharged from the condenser, and is controlled to be communicated with the tower column and discharge the trimethyl gallium condensate to the tower column; the fraction tank is controlled to be communicated with the reflux controller and receive the trimethyl gallium condensate discharged from the reflux controller; and the inert gas feeding device is controlled to be communicated with the fraction tank. By using the trimethyl gallium purification system and purification method provided by the invention, high-purity trimethyl gallium can be obtained.

Description

technical field [0001] The invention relates to the purification of metal organic compounds, in particular to a purification system and method for trimethylgallium. Background technique [0002] Megabit level (99.9999%) metal-organic compounds (MO source), such as trimethylgallium, trimethylaluminum, dimethylzinc and diethylzinc, etc., are the main metal sources for the manufacture of optoelectronic compound semiconductor materials. Organic chemical vapor deposition process (Metal-organic Chemical Vapor Deposition, abbreviated as MOCVD) and metal-organic molecular beam epitaxy (Metal-Organic Molecular Beam Epitaxy, abbreviated as MOMBE) and other technologies to grow and prepare optoelectronic semiconductor compound materials (such as GaAs, GaN, InP , AlGaAs and other compound semiconductor ultra-thin film materials) basic source materials. [0003] The purity of the MO source is the key to its high quality (e.g. chip luminous intensity, leakage resistance). In addition, d...

Claims

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Application Information

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IPC IPC(8): C07F5/00
Inventor 朱刘朱世会朱世明刘留
Owner 清远先导材料有限公司
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