High-temperature annealing method for manufacturing silicon carbide device
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A high-temperature annealing, silicon carbide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of low production cost, shortened process time, and reduced annealing time
Active Publication Date: 2012-09-12
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF2 Cites 11 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
The currently commonly used SiC high-temperature annealing method still has many defects, and the preparation of the protective layer and the annealing conditions still need to be improved.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0020] With reference to the accompanying drawings,
[0021] 1) Use a mixed solution of hydrochloric acid and nitric acid (the weight ratio is 1:1) to clean the ion-implanted SiC wafer, type 4H-SiC;
[0022] 2) Coating a layer of ArF photoresist on the SiC wafer as a protective layer;
[0023] 3) Put the SiC wafer into a high-temperature annealing furnace, and fill it with argon as a protective gas;
[0024] 4) Set the pressure of the high-temperature annealing furnace to 10Pa, heat the SiC wafer to 1000°C for the first time, and heat up at a rate of 100°C / min, keep the temperature for 10 minutes, and carbonize the protective layer;
[0025] 5) Set the pressure of the high-temperature annealing furnace to 1000Pa, heat the SiC wafer for the second time, from 1000°C to 2000°C, with a heating rate of 100°C / min, keep the temperature for 1 minute, and perform high-temperature annealing;
[0026] 6) Set the pressure of the high-temperature annealing furnace to 2000Pa, and cool dow...
Embodiment 2
[0028] Referring to the accompanying drawings,
[0029] 1) Clean the ion-implanted SiC wafer with sulfuric acid, then clean the ion-implanted SiC wafer with hydrochloric acid, type 6H-SiC;
[0030] 2) Coating a layer of electron beam photoresist on the SiC wafer as a protective layer;
[0031] 3) Put the SiC wafer into a high-temperature annealing furnace, and fill it with argon as a protective gas;
[0032] 4) Set the pressure of the high-temperature annealing furnace to 0.0001Pa, heat the SiC wafer for the first time to 850°C, the heating rate is 80°C / min, and keep the temperature for 30 minutes to carbonize the protective layer;
[0033] 5) Set the pressure of the high-temperature annealing furnace to 500Pa, heat the SiC wafer for the second time, from 850°C to 1850°C, with a heating rate of 200°C / min, keep the temperature for 5 minutes, and perform high-temperature annealing;
[0034] 6) Set the pressure of the high-temperature annealing furnace to 1000Pa, and cool the S...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses a high-temperature annealing method for manufacturing a silicon carbide device. The high-temperature annealing method includes 1), cleaning an SiC chip injected with ions by acid solution; 2), coating a layer of organic compounds to be used as a protective layer on the SiC chip; 3), placing the SiC chip into a high-temperature annealing furnace and filling argon into the high-temperature annealing furnace to be used as protective gas; 4), heating the SiC chip to reach first temperature and carbonizing the protective layer; 5), heating the SiC chip to reach second temperature and carrying out high-temperature annealing; and 6), cooling. The high-temperature annealing method has the advantages that carbonized photoresist is used as the protective layer when in high-temperature annealing, extra equipment for preparing the protective layer is omitted, the protective layer can be prepared in the high-temperature furnace, a process is simple, and cost is low; the protective gas is the argon, and a tail gas treatment system for equipment is omitted; the process time can be greatly shortened owing to improved annealing conditions; and the surface of the SiC chip can be protected completely and cannot be affected in a high-temperature annealing procedure, and reliability and yield of the device are finally improved.
Description
technical field [0001] The invention relates to a high-temperature annealing method, in particular to a high-temperature annealing method for manufacturing silicon carbide devices. Background technique [0002] Silicon carbide (SiC) material is the third-generation wide-bandgap semiconductor material developed after the first-generation elemental semiconductor material (Si) and the second-generation compound semiconductor material (GaAs, GaP, InP, etc.). Due to the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, and high electron saturation drift velocity, SiC materials are especially suitable for making microwave high-power, high-voltage, high-temperature, and radiation-resistant electronic devices, and have a wide range of applications in all aspects of the national economy. application. At present, the development of SiC devices has become a research hotspot. [0003] One of the key processes in the preparation of SiC...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324
Inventor 李理柏松陈刚
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Login to view more 
Login to view more