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Low-carbon quasi-single crystal ingot furnace and method for adopting low-carbon quasi-single crystal ingot furnace for ingot casting

A carbon quasi-single crystal and ingot furnace technology, applied in the field of ingot furnace and ingot casting, can solve the problem of high inclusion content of silicon carbide, and achieve the effect of eliminating delay and hysteresis

Inactive Publication Date: 2015-04-15
TIANWEI NEW ENERGY HLDG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to overcome the shortcomings and deficiencies of the above-mentioned prior art, provide a low-carbon quasi-single crystal ingot furnace and a method for casting ingots using the ingot furnace, and solve the problem of single crystal ingots produced by existing ingot furnaces. Defects of excessive carbon content and silicon carbide inclusions

Method used

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Experimental program
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Effect test

Embodiment 1

[0033] like figure 1 As shown, the low-carbon quasi-single crystal ingot casting furnace includes a furnace body 1, a heat insulation cage 2 arranged in the furnace body, and a heat exchange platform 9 arranged in the heat insulation cage 2, and a Crucible 7, the crucible 7 is a quartz crucible, the top of the crucible 7 is provided with a heater A3, and heaters B8 are distributed around it, the upper end of the crucible 7 is also provided with a cover plate 5, and the upper end of the furnace body 1 is provided with a vent , the vent is provided with a bushing 4, the bushing 4 passes through the heat insulation cage 2 and the cover plate 5 to communicate with the crucible 7, and the heater B8 is connected by a heater lifting rod 11 The traction device 12 outside the furnace body 1 .

[0034] Further, the above-mentioned heat exchange platform 9 is fixed by a support 10 , one end of the support 10 is installed on the bottom surface of the heat exchange platform 9 , and the ot...

Embodiment 2

[0048] like figure 1 As shown, the low-carbon quasi-single crystal ingot casting furnace includes a furnace body 1, a heat insulation cage 2 arranged in the furnace body, and a heat exchange platform 9 arranged in the heat insulation cage 2, and a Crucible 7, the crucible 7 is a quartz crucible, the top of the crucible 7 is provided with a heater A3, and heaters B8 are distributed around it, the upper end of the crucible 7 is also provided with a cover plate 5, and the upper end of the furnace body 1 is provided with a vent , the vent is provided with a bushing 4, the bushing 4 passes through the heat insulation cage 2 and the cover plate 5 to communicate with the crucible 7, and the heater B8 is connected by a heater lifting rod 11 The traction device 12 outside the furnace body 1 .

[0049] Further, the above-mentioned heat exchange platform 9 is fixed by a support 10 , one end of the support 10 is installed on the bottom surface of the heat exchange platform 9 , and the ot...

Embodiment 3

[0063] like figure 1 As shown, the low-carbon quasi-single crystal ingot casting furnace includes a furnace body 1, a heat insulation cage 2 arranged in the furnace body, and a heat exchange platform 9 arranged in the heat insulation cage 2, and a Crucible 7, the crucible 7 is a quartz crucible, the top of the crucible 7 is provided with a heater A3, and heaters B8 are distributed around it, the upper end of the crucible 7 is also provided with a cover plate 5, and the upper end of the furnace body 1 is provided with a vent , the vent is provided with a bushing 4, the bushing 4 passes through the heat insulation cage 2 and the cover plate 5 to communicate with the crucible 7, and the heater B8 is connected by a heater lifting rod 11 The traction device 12 outside the furnace body 1 .

[0064] Further, the above-mentioned heat exchange platform 9 is fixed by a support 10 , one end of the support 10 is installed on the bottom surface of the heat exchange platform 9 , and the ot...

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Abstract

The invention discloses a low-carbon quasi-single crystal ingot furnace and a method for adopting the low-carbon quasi-single crystal ingot furnace for ingot casting. The low-carbon quasi-single crystal ingot furnace comprises a furnace body (1), a heat insulation cage (2) and a heat exchange table (9), wherein a crucible (7) is placed on the heat exchange table (9), the top of the crucible (7) is provided with heaters A (3), and heaters B (8) are distributed at the circumference of the crucible (7) and are connected with traction devices (12) through heater lifting rods (11). The method comprises five steps including material charging, heating melting, crystal growth, annealing and cooling. The low-carbon quasi-single crystal ingot furnace and the method have the advantages that the ingredient supercooling phenomenon caused by carbon content enriching in a solute boundary layer can be effectively inhibited, so the influence on the growth speed of quasi-single crystals caused by impurity enriching is reduced, and meanwhile, the content of carbon in quasi-single crystal ingots can be effectively reduced; and the generation and the growth of the fine crystal regions near the crucible wall can be effectively inhibited, so the quality of the quasi-single crystal ingots can be obviously improved, and the utilization rate of the ingots is improved.

Description

technical field [0001] The invention relates to an ingot casting furnace and an ingot casting method thereof, in particular to a low-carbon quasi-single crystal ingot casting furnace and an ingot casting method using the ingot casting furnace. Background technique [0002] At present, crystalline silicon solar cells have been occupying the leading position in the solar cell market by virtue of their high efficiency and stability. Among them, monocrystalline silicon solar cells have the characteristics of low defects and high conversion efficiency, especially the pyramid-shaped textured surface formed by the alkali texturing method greatly strengthens the absorption of light and improves the conversion efficiency. At present, the conversion efficiency of large-scale production of monocrystalline silicon cells has reached 18%. However, this method has high requirements on raw materials and operations, and the single feeding is less, and the product cost is higher. For boron-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06H01L31/18
CPCY02P70/50
Inventor 罗大伟路忠林林洪峰盛雯婷张凤鸣
Owner TIANWEI NEW ENERGY HLDG
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