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Multilayer varistor and preparation method for same

A technology of varistors and varistors, which is applied in the direction of varistor cores, varistors, resistors, etc., can solve the problems of high voltage gradient, high production cost, and poor resistance to current impact, and achieve improved Overall performance, low production cost, consistent effect

Active Publication Date: 2015-03-25
GUANGDONG FENGHUA ADVANCED TECH HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003]1, ZnO-Bi2O3 system, the inner electrode adopts pure Pd or Pd30 / Ag70 system , there are four main disadvantages of the combination of these two systems: The Bi element in the ceramic body and the Pd element in the internal electrode chemically reaction, which has a certain adverse effect on the electrical properties of the product
High production cost, more than 3 times higher than pure Ag internal electrode
The firing temperature of this system is relatively high, generally above 1000℃, which is not conducive to energy saving and consumption reduction
④The voltage gradient is higher than 450V / mm, which is not suitable for the production of varistor voltage 5V series products
[0005]①The production cost is high, more than 10 times higher than that of the pure Ag inner electrode
②The sintering temperature of the product is very high, above 1280°C, which is not conducive to energy saving and consumption reduction
[0006] 3. ZnO-V2O5 system, internal electrode uses Pd / Ag alloy, disadvantages: product The electrical performance is very poor (low nonlinear coefficient, large leakage current, poor current impact resistance, etc.), poor reliability, the internal electrode contains Pd, and the production cost is high
[0007] 4. ZnO-glass system, the internal electrode uses Pd / Ag alloy, the disadvantage: the electrical performance of the product is very poor, the voltage gradient is higher than 700V / mm, the internal electrode Contains Pd, high production cost

Method used

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  • Multilayer varistor and preparation method for same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A multilayer varistor, comprising a varistor body, and an internal electrode in a porcelain body, the varistor body is made of ZnO-Bi 2 o 3 - SiO 2 -SnO 2 It is composed of a ceramic material system, and the internal electrode is a pure Ag electrode. The ZnO-Bi 2 o 3 -SiO 2 -SnO 2 It is a ceramic material system, and its specific molar formula components are: ZnO 91.0mol%, Bi 2 o 3 2.0 mol%, SiO 2 1.0mol%, SnO 2 1.0mol%, Sb 2 o 3 1.2mol%, TiO 2 1.5mol%, Co 3 o 4 1.0mol%, MnCO 3 0.7mol%, Cr 2 o 3 0.5mol%, Nd 2 o 3 0.05mol%, Al(NO 3 ) 3 .9H 2 O 0.006mol%. Its preparation method includes batching, batching ball milling, casting, molding, drying, lamination, cutting, debinding, sintering, chamfering, capping, firing, electroplating, testing, finished product inspection, taping / packaging, and storage procedures , the ball milling of the ingredients is to first make the Bi in the formula 2 o 3 , SiO 2 , SnO 2 , Sb 2 o 3 、TiO 2 、Co 3 o ...

Embodiment 2

[0018]The process of porcelain and components is the same as that of Example 1, and the product specification is 0805 product. The thickness of the dielectric layer is designed to be 50 μm, the number of layers is 5, and the sintering temperature is 880 °C / 5h.

[0019] The electrical performance parameters of the product are good, as shown in Table 2:

[0020] Table 2

[0021]

Embodiment 3

[0023] The process of the ceramic material and components is the same as that of Example 1. The product specification is 1812 product. The thickness of the dielectric layer is designed to be 100 μm, the number of layers is 10, and the sintering temperature is 880°C / 5h.

[0024] The electrical performance parameters of the product are good, as shown in Table 3:

[0025] table 3

[0026]

[0027] It can be seen from Tables 1-3 that the pressure-sensitive device prepared by the present invention has good performance in main electrical parameters.

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Abstract

The invention discloses a multilayer varistor and a preparation method for the same. The multilayer varistor comprises a varistor body and an internal electrode in a porcelain body, wherein the varistor body consists of a ZnO-Bi2O3-SiO2-SnO2 porcelain system; and the internal electrode is a pure Ag electrode. The varistor is high in electrical property and low in production cost.

Description

technical field [0001] The invention relates to electronic components, in particular to a multilayer piezoresistor and a preparation method thereof. Background technique [0002] With the popularization of mobile communication equipment, the reduction of volume and the reduction of required power supply voltage make its protection against overvoltage and electrostatic discharge (ESD) become increasingly important, and as the best component for surge protection and ESD in the circuit Multilayer chip varistors, which are the preferred components for protection, are also widely used. At present, the production of multilayer chip varistor ceramic system and internal electrode material system in the world mainly has the following four situations: [0003] 1. ZnO-Bi 2 o 3 system, the internal electrode adopts pure Pd or Pd30 / Ag70 system, the disadvantages of the combination of these two systems mainly include 4 points: The Bi element in the porcelain body reacts chemically w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/10H01C7/112H01C17/00C04B35/453
Inventor 唐斌陈加旺李强岑权进陈加增莫德峰
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG