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Bragg reflection waveguide double-beam laser and application method thereof

A Bragg reflection, double beam technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of difficult to stabilize the output power of the device, complex optical alignment, difficult to mass production, etc., to achieve compactness and high stability , large laser cavity, the effect of improving reliability

Active Publication Date: 2012-10-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods require complex optical alignment and are not compact in size, high in cost, poor in repeatability, and difficult to mass-produce
Another solution is to use a double-strip semiconductor laser or a phase-coupled strip-shaped semiconductor laser array, which can output two laser beams laterally, but the problem it faces is that there is serious thermal crosstalk between these different light-emitting points, The power of a light-emitting point is easily affected by the heat generated when the adjacent light-emitting point is energized, the output power of the device is difficult to stabilize, and the application is limited

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  • Bragg reflection waveguide double-beam laser and application method thereof
  • Bragg reflection waveguide double-beam laser and application method thereof
  • Bragg reflection waveguide double-beam laser and application method thereof

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Embodiment 1

[0041] Such as Figure 4 (a), (b) and (c) are schematic diagrams of the refractive index distribution, near-field and far-field intensity distribution of the fundamental transverse mode of a 980nm wavelength Bragg reflective waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer are made of 6 pairs of Al with a thickness of 100nm / 600nm respectively. 0.1 Ga 0.9 As / Al 0.3 Ga 0.7 As periodic waveguide, where Al 0.1 Ga 0.9 As and Al 0.3 Ga 0.7 The refractive index of the As material is about 3.45 and 3.34 respectively; the material of the defect layer is Al 0.3 Ga 0.7 As, the thickness is 1300nm, the refractive index is 3.34; the active area uses In 0.2 Ga 0.8 As / GaAs quantum wells (QWs), located in the center of the defect layer. From Figure 4 (b) The near-field intensity distribution of the fundamental mode in (b) It can be seen that the near-field electric field distribution of the fundamental mode of the laser in the present invention is cl...

Embodiment 2

[0043] Such as Figure 5 (a), (b) and (c) are schematic diagrams of the refractive index distribution, near-field and far-field intensity distribution of the fundamental transverse mode of a 980nm wavelength Bragg reflective waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer are made of 6 pairs of Al with a thickness of 100nm / 600nm respectively. 0.35 Ga 0.65 As / Al 0.1 Ga 0.9 As periodic waveguide, where Al 0.35 Ga 0.65 As and Al 0.1 Ga 0.9 The refractive index of the As material is 3.31 and 3.45 respectively; the material of the defect layer is Al 0.1 Ga 0.7 As, the thickness is 400nm, the refractive index is 3.45; the active area uses In 0.2 Ga 0.8 As / GaAs quantum wells (QWs). From Figure 4 (b) The near-field intensity distribution of the fundamental mode shows that even if the defect layer is made of a high-refractive material, by reducing its thickness, a near-field electric field distribution close to the cosine function can be obta...

Embodiment 3

[0045] Such as Figure 6 (a), (b), and (c) are schematic diagrams of the refractive index distribution, near-field and far-field intensity distribution of the fundamental transverse mode of an 850nm wavelength Bragg reflective waveguide dual-beam laser. Its lower waveguide layer and upper waveguide layer are made of 8 pairs of Al with a thickness of 200nm / 500nm respectively. 0.15 Ga 0.85 As / Al 0.3 Ga 0.7 As periodic waveguide, where Al 0.15 Ga 0.85 As and Al 0.3 Ga 0.7 The refractive index of As material at 850nm wavelength is about 3.5 and 3.4 respectively; the defect layer material is 1μm thick Al 0.35 Ga 0.65 As, the refractive index is about 3.37. From Figure 6 (b) It can be seen that when the lower confinement layer and the upper confinement layer do not exist, a stronger optical field confinement can still be obtained by increasing the period logarithm of the Bragg mirror, so that the leakage loss of the laser can be kept at a low level.

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Abstract

The invention relates to a Bragg reflection waveguide double-beam laser which sequentially comprises an N-plane electrode, a substrate, a buffer layer, a lower waveguide layer, a defective layer, an upper waveguide layer, a cover layer and a P-plane electrode from bottom to top. An active region is arranged in the defective layer; the lower waveguide layer comprises a plurality of pairs of Bragg reflectors formed in a mode that N-type doped high and low refractive index material layers periodically and alternately grow; the upper waveguide layer comprises a plurality of pairs of Bragg reflectors formed in a mode that P-type doped high and low refractive index material layers periodically and alternately grow; and the effective refractive index of a guided mode is lower than those of the P-type doped low refractive index material layers and the N-type doped low refractive index material layers. The Bragg reflection waveguide double-beam laser disclosed by the invention can directly output two beams of stable laser with low transversal divergence, separated angles between the double beams and controllable power symmetry and has wide application prospect in the fields of high-speed laser scanning, high-precision laser detection, laser processing, an off-axis outer cavity, coherent coupling and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and relates to a Bragg reflection waveguide double-beam laser and an application method thereof. Background technique [0002] In laser scanning technology, due to the actual limitation of the data modulation rate and the rotation speed of the scanning mirror, the single-beam scanning speed is close to the limit. Therefore, the use of double-beam or multi-beam scanning is an important way to break through this limitation. It can make laser printing Speed ​​or disc read and write speed doubled. In the field of laser detection and other fields, due to the intensity disturbance of the laser and the noise generated by the thermal lens effect, the detection accuracy of the current commercial laser absorption spectrometer is generally not high, and two laser beams with good intensity correlation are used as the reference light and the signal light respectively. It can effectively eliminat...

Claims

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Application Information

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IPC IPC(8): H01S5/125
Inventor 汪丽杰佟存柱杨晔王立军曾玉刚张俊
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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