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Crystal bar surface nanocystalized process and wafer manufacture method

A manufacturing method and nanotechnology, applied in chemical instruments and methods, nanotechnology, semiconductor/solid-state device manufacturing, etc., can solve the problems of crystal rod surface brittleness, high defect rate, affecting the yield of wafer process, etc. The effect of strengthening the mechanical strength and reducing the problem of chipping

Inactive Publication Date: 2015-07-08
KUNSHAN ZHONGCHEN SILICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the aforementioned mechanical processing may lead to a higher defect rate for crystal rods with high brittleness. Small cracks occur on the edge of the circle, which makes it easy to break in the subsequent wafer process, seriously affecting the yield of the wafer process

Method used

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  • Crystal bar surface nanocystalized process and wafer manufacture method
  • Crystal bar surface nanocystalized process and wafer manufacture method
  • Crystal bar surface nanocystalized process and wafer manufacture method

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Embodiment Construction

[0029] The present invention proposes a crystal rod surface nanometerization process and a wafer manufacturing method thereof. The crystal rod surface nanometerization process mainly involves performing a surface treatment step on at least one surface of the crystal rod before the crystal rod is subjected to the slicing step, so that A microstructure layer with a nanostructure is formed on the surface, and the formed microstructure layer can provide the effect of releasing stress, so as to reduce the chipping ratio of the ingot in the slicing step, thereby improving the yield rate of wafer manufacturing and quality.

[0030] The crystal ingot surface nano-processing process proposed by the present invention uses wet etching to modify the surface of the ingot surface, so that the surface of the ingot generates nanostructures. The shape of this nanostructure is similar to a grass-like structure. , so it can also be called the silicon grass (silicon grass) structure, or the black...

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Abstract

The invention relates to a crystal bar surface nanocystalized process, before a crystal bar is sliced, a surface treatment step is carried out on at least one surface of the crystal bar, a microstructure layer possessing a nanostructure is formed on the surface, and the microstructure layer possessing the nanostructure can reinforce the intensity of the crystal bar surface to reduce the scrap rate during slicing process.

Description

1. Technical field [0001] The present invention relates to a crystal rod surface nanometerization process and a wafer manufacturing method thereof, especially a crystal rod surface nanometerization process and a wafer manufacturing method that can reduce chipping rate of slicing. 2. Background technology [0002] Information products and information appliances used in daily life, such as mobile phones, computer motherboards, microprocessors, memory, digital cameras, PDAs and other electronic products, all have computing units composed of IC semiconductors, and the so-called IC It is a circuit component with specific electrical functions manufactured by using wafers through various semiconductor processes. [0003] The semiconductor processing process can include the initial crystal growth, and then to slicing, grinding, polishing, cleaning and other related steps. The process of forming wafers by cutting the ingot directly determines the number of wafers produced, which dire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10B82Y40/00H01L21/02
Inventor 钱俊逸李建志杨昆霖徐文庆
Owner KUNSHAN ZHONGCHEN SILICON CO LTD