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High-white-light luminous efficiency gallium nitride LED pipe core structure

A white light efficiency, gallium nitride technology, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effect of improving white light efficiency

Active Publication Date: 2012-10-17
吴江市民福电缆附件厂
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the application of LED lighting, how to maximize the efficiency of blue light conversion to white light in the field of general lighting has become a research hotspot in the entire process of epitaxy, chip, and packaging. However, there has been no report on improving the light efficiency of blue light conversion to white light in the application of reflective films

Method used

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  • High-white-light luminous efficiency gallium nitride LED pipe core structure
  • High-white-light luminous efficiency gallium nitride LED pipe core structure
  • High-white-light luminous efficiency gallium nitride LED pipe core structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1, Gallium Nitride LED Tube Core Structure with Double Composite DBR Dielectric Film

[0033] The structure of GaN-based LED tube core with composite DBR dielectric reflective film is as follows: figure 2 shown. Including top-down P electrode 4, P-type current spreading layer 27, quantum well active region 25, N-type layer 24, N electrode 3, substrate 2, reflective film 1; Thin Polished Al 2 o 3 On the back of the substrate 2, the reflective film is a double composite DBR dielectric film made of TiO 2 , SiO 2 The two kinds of dielectric film materials are combined alternately, and the total number of dielectric film layers is 12 layers, a total of 6 pairs. Among them, the first three pairs of films are 460nm-band high-reflection films 23, and the optical thickness of each pair of films is 115nm, and the last three pairs of films are 580nm-band high-reflection films 22, and the optical thickness of each pair of films is 145nm. A metal Al thin film with ...

Embodiment 2

[0039] Example 2: Gallium Nitride LED Tube Core Structure of Triple Composite DBR Dielectric Film

[0040] The reflective film on the back of the substrate is a triple composite DBR dielectric film, and the triple composite DBR dielectric film is a composite film with high reflection of 460nm blue light, high reflection of 510nm green light and high reflection of 580nm yellow light; the entire DBR structure has three bands of high reflection film system. Using a dielectric film electron beam evaporation platform, in a vacuum of 10 -7 TiO deposited under torr pressure 2 , SiO 2 The refractive index of the medium is 2.35 and 1.46 respectively; sequentially evaporate TiO 2 , SiO 2 Alternate thin film, 12 layers in 6 periods, of which the film thickness of the first 2 periods is the 460nm band high reflection film system, the film optical thickness of each period is 115nm, and the next 2 periods are the 510nm band high reflection film system, and the film optical thickness of ...

Embodiment 3

[0041] Embodiment 3: Application of Gallium Nitride LED Tube Core Structure in Embodiment 1

[0042] Such as image 3 As shown, an application example of GaN-based LED chip white light packaging with a composite DBR dielectric reflective film:

[0043] The GaN LED die of the above-mentioned embodiment 1 is solidified in a bowl according to the chip packaging process and connected to the positive electrode 7 and the negative electrode 6 of the base by welding wires, coated with yellow phosphor 10, and sealed with a rubber cap. Chip 5 multiple composite reflective film: the blue high reflection makes the blue light 9 recombined in the quantum well active area reflected by this layer and will be recombined with the phosphor powder or emitted from the front, and the yellow high reflectance makes the yellow light 8 already excited by the phosphor pass through The high-reflection layer is reflected back to the front exit surface, so that more blue light and yellow light are mixed i...

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Abstract

The invention relates to a high-white-light luminous efficiency gallium nitride LED pipe core structure. A DBR reflective film of a GaN LED pipe core is evaporated on a back of a thinning polished substrate. The reflective film is a multi-composite DBR dielectric film and is formed by two dielectric film materials. And a film system structure is multiband light wave reflection. The dielectric film materials are selected from TiO2 and SiO2. The material layers are alternated in each period. A dielectric film period number is 6-25 and a total number of the layers is 12-50. On one hand, a whole high reverse film pulse width is extended; on the other hand, blue high reflection makes that blue light composited in a quantum-well active region can carry out forward composite excitation with a fluorescent powder or carry out positive emission and yellow high reflection makes that yellow light excited by the fluorescent powder is reflected to a positive light emitting surface through a high reflection layer so that a plurality of the blue light and yellow light are mixed into white light. The luminous efficiency of the GaN blue light LED packaging white light is increased obviously.

Description

technical field [0001] The invention relates to a gallium nitride LED chip structure with a composite reflection film, and belongs to the technical field of light-emitting diode device preparation. Background technique [0002] LED has the characteristics of energy saving, environmental protection, long life and small size. It is called the fourth generation lighting source or green light source. It can be widely used in various indications, displays, decorations, backlights, general lighting and urban night scenes. In recent years, some economically developed countries in the world have launched a fierce technical competition around the development of LEDs. The United States has invested 500 million U.S. dollars to implement the "National Semiconductor Lighting Plan" since 2000, and the European Union also announced in July 2000 the launch of a similar "Rainbow Project". With the support of the "863" plan, the Ministry of Science and Technology of my country proposed a pla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/10H01L33/00H01L33/48H01L33/50
Inventor 沈燕冯健蔺福合王成新李树强
Owner 吴江市民福电缆附件厂
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