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Light high-strength silicon nitride bonded silicon carbide refractory and preparation method thereof

A technology of refractory materials and silicon carbide, which is applied in the field of refractory materials, can solve the problems of low specific strength of refractory materials, increased energy consumption of material heat capacity, and reduced material life, so as to achieve the effect of increasing specific strength, low cost and reducing heat capacity

Inactive Publication Date: 2014-04-16
NANJING TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The lower specific strength (high bulk density) of refractory materials will lead to higher heat capacity of the material, resulting in increased energy consumption, large load-bearing equipment and other shortcomings, and will also reduce the life of the material

Method used

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  • Light high-strength silicon nitride bonded silicon carbide refractory and preparation method thereof

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Experimental program
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Effect test

Embodiment 1、2、4、5、8、9、10

[0021] The preparation method of embodiment 1,2,4,5,8,9,10:

[0022] After mixing all the raw materials, carry out ball milling, use absolute ethanol as the ball milling medium, use Si in the planetary mill 3 N 4 Ball milling for 24 hours (the mass ratio of raw materials, balls and absolute ethanol is 1:1.5:1), the ball milling time is 10 hours, the slurry after ball milling is dried at 60°C, and PVA with 10% weight of raw materials is added to granulate , pass through a 40-mesh sieve, place at room temperature for 24 hours, take an appropriate amount of granulated powder in a mold, and dry press to form it. The forming pressure is 40-45MPa. The formed test strip is 80mm long, 7.5mm wide, and about 5.7mm high , degumming, after degumming, nitriding and sintering in a high-temperature vacuum atmosphere sintering furnace under the condition of flowing high-purity nitrogen (purity>99.99%) (nitrogen flow rate: 1-3L / min) to obtain light-weight and high-strength silicon nitride bon...

Embodiment 3、6、7

[0023] The preparation method of embodiment 3,6,7:

[0024] After mixing all the raw materials, carry out ball milling, use absolute ethanol as the ball milling medium, use Si in the planetary mill 3 N 4 Ball milling for 24 hours (the mass ratio of raw materials, balls and absolute ethanol is 1:1.5:1.5), the ball milling time is 8 hours, the slurry after ball milling is dried at 80°C, and PVA with 12% raw material weight is added to granulate , passed through a 60-mesh sieve, placed at room temperature for 24 hours, took an appropriate amount of granulated powder in the mold, and dry-pressed it to form it. The forming pressure was 50-55 MPa. The formed test strip was 80 mm long, 7.5 mm wide, and about 5.5 mm high. , degumming, after degumming, nitriding and sintering in a high-temperature vacuum atmosphere sintering furnace under the condition of flowing high-purity nitrogen (purity>99.99%) (nitrogen flow rate: 1-3L / min) to obtain light-weight and high-strength silicon nitrid...

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Abstract

The invention discloses a light high-strength silicon nitride bonded silicon carbide refractory and a preparation method thereof. The refractory is mainly made of silicon carbide and silica powder, and the weight ratio of the silicon carbide and the silica powder is (65-85): (15-30), wherein the particle size D50 of the silicon carbide is 0.1-150 microns and the particle size D50 of the silica powder is 0.1-1 micron. The preparation method includes subjecting all the raw materials to ball milling for 8-12 hours after mixing, and drying the materials after the ball milling, adding polyvinyl alcohol (PVA) which accounts for 8-12% of the raw materials by weight for granulation, subjecting the mixture to a sieve with 40-80 meshes, standing at a room temperature for more than 24 hours, performing dry pressing with 40-80MPa of the pressing pressure, binder removing, and nitridation sintering. The silicon nitride bonded silicon carbide refractory prepared through the formula and the method has the advantages of being low in production cost, easy to achieve industrial production, low in volume density and high in bending strength of products, and capable of reducing the production energy consumption and improving the utilization rate of equipment.

Description

technical field [0001] The invention relates to the technical field of refractory materials, in particular to a silicon nitride bonded silicon carbide refractory material and a preparation method thereof. Background technique [0002] The existing silicon nitride combined with silicon carbide refractory material has excellent properties such as stable chemical properties, high bending strength at room temperature, large thermal conductivity and small thermal expansion coefficient. The high-temperature flexural strength of silicon nitride combined with silicon carbide refractories is higher than that at room temperature, so it is often used in kilns, metallurgy, and steel industries. There are many sintering methods for silicon nitride combined with silicon carbide materials, such as atmospheric pressure sintering, hot isostatic pressing sintering, air pressure sintering, hot pressing sintering and reaction sintering. The use of reaction sintering to prepare silicon nitride ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/66C04B35/565C04B35/622
Inventor 郭露村叶飞陈涵
Owner NANJING TECH UNIV
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