Tri-strain SOI (Silicon On Insulator) Si based BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor Transistor) integrated device based on crystal face selection and preparation method thereof

Abstract

The invention discloses a tri-strain SOI (Silicon On Insulator) Si based BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor Transistor) integrated device based on crystal face selection and a preparation method thereof. The preparation method comprises the steps of: preparing a SOI substrate; continuously growing an N-Si layer, a P-SiGe layer and an N-Si layer and depositing a dielectric layer to prepare a shallow trench isolation region of a collecting region and a shallow trench isolation region of a base region; carrying out photo-etching on the collecting region and phosphorous ion injection, forming a collecting electrode contact region and a base electrode contact region and forming a SiGe HBT (Heterojunction Bipolar Transistor) device; etching the deep trench in an NMOS (N-channel Metal Oxide Semiconductor) region, selectively growing a strain Si epitaxial layer with the crystal face (100), and preparing a strain Si channel NMOS device; selectively growing a strain Si epitaxial layer with the crystal face (110) in an active region of a PMOS (P-channel Metal Oxide Semiconductor), and preparing a compression strain SiGe channel PMOS device; and forming the tri-strain SOI Si based BiCMOS integrated device based on crystal face selection and a circuit. According to the tri-strain SOI Si based BiCMOS integrated device based on crystal face selection and the preparation method of the tri-strain SOI Si based BiCMOS integrated device based on crystal face selection, a performance-enhanced planar BiCMOS integrated circuit is prepared based on the SOI substrate by means of characteristics that the electronic mobility of the strain Si material is higher than that of the body strain Si material and the hole mobility of the compression strain Si material is higher than that of the body strain Si material and the mobility is anisotropic adequately.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a three-strain SOI Si-based BiCMOS integrated device based on crystal plane selection and a preparation method. Background technique [0002] In the contemporary era of highly developed information technology, microelectronic technology represented by integrated circuits is the key to information technology. As the fastest-growing, most influential and most widely used technology in human history, integrated circuits have become an important symbol to measure a country's scientific and technological level, comprehensive national strength and national defense strength. [0003] "Moore's Law", which has had a huge impact on the development of the microelectronics industry, states that the number of transistors on an integrated circuit chip doubles approximately every 18 months, and the performance also doubles. For more than 40 years, the worl...

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Problems solved by technology

[0008] Due to the low mobility of Si material carrier materials, the performance of integrated circuits manufactured using Si BiCMOS technology, especially the frequency performance, is greatly limited; for SiGe BiCMOS technology, although SiGe HBT is used for bipolar transistors, However, Si CMOS is still used for unipolar devices that restrict the improvement of the frequency characteristics of BiCMOS integrated circuits, so these limit the further improvement of the performance of BiCMOS integrated circuits

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